Bonding pad and method of making same
The description relates to a bonding pad for a semiconductor device deposited. The first region comprising aluminum deposited at a high temperature having a large grain size. The second region comprising aluminum deposited at a lower temperature having a smaller grain size.
1. A bonding pad for a semiconductor device comprising:
a first region over a buffer layer, the first region comprising aluminum and having a first average grain size;
a second region comprising aluminum and having a second average grain size formed over the first region; and
a first passivation layer surrounding the first region and the second region,
a second passivation layer partially covering the second region,
wherein the first average grain size is different than the second average grain size, and
wherein the first region and the second region extend along a top surface of the first passivation layer.
2. The bonding pad of claim 1 , wherein the first average grain size is larger than the second average grain size.
3. The bonding pad of claim 2 , wherein the first average grain size is at least 1.5 times larger than the second average grain size.
4. The bonding pad of claim 1 , wherein the first average grain size is about 2.0 μm to about 4.0 μm.
5. The bonding pad of claim 1 , wherein the second average grain size is about 0.1 μm to about 2.0 μm.
6. The bonding pad of claim 1 , wherein at least one of the first and second regions further comprise copper.
7. The bonding pad of claim 1 , wherein the thickness of the second region is more than 10 nm.
8. The bonding pad of claim 1 , further comprising a buffer layer under the first region.
9. A bonding pad for a semiconductor device comprising:
a first region over a buffer layer, the first region comprising aluminum and having a first average grain size of about 2.0 μm to about 4.0 μm;
a second region comprising aluminum and having a second average grain size of about 0.1 μm to about 2.0 μm; and
a first passivation layer surrounding the first region and the second region; and
a second passivation layer partially covering the second region,
wherein the first average grain size is at least 1.5 times greater than the second average grain size, and
wherein the first region and the second region extend along a top surface of the first passivation layer.
10. The bonding pad of claim 9 , wherein at least one of the first and second regions further comprise copper.
11. The bonding pad of claim 9 , wherein the thickness of the second region is more than 10 nm.
12. The bonding pad of claim 9 , further comprising a top metal under the first region.
13. The bonding pad of claim 9 , further comprising a buffer layer between the top metal and the first region.
14. A bond pad structure comprising:
a dielectric layer;
a conductive layer on the dielectric layer;
a first passivation layer over the conductive layer, the first passivation layer defining an opening exposing a portion of the conductive layer; and
a bond pad filling at least a portion of the opening and in electrical connection with the conductive layer, the bond pad comprising:
a first region over a buffer layer, the first region comprising aluminum and having a first average grain size; and
a second region over the first region, the second region comprising aluminum and having a second average grain size;
a second passivation layer partially covering the second region; and
wherein the first average grain size is different than the second average grain size,
and
wherein the first region and the second region extend along a top surface of the first passivation layer.
15. The bond pad structure of claim 14 , further comprising a second passivation layer over the first passivation layer and a portion of the bond pad.
16. The bond pad structure of claim 14 , wherein the bond pad further comprises a buffer layer positioned between the first passivation layer and the first region and between the conductive layer and the second region.
17. The bond pad structure of claim 14 , wherein the bond pad further comprises a buffer layer between the conductive layer and the first region.
18. The bond pad structure of claim 14 , wherein the first average grain size is at least 1.5 times larger than the second average grain size.
19. The bond pad structure of claim 14 , wherein a composition of the first region is different from a composition of the second region.
20. The bond pad structure of claim 14 , wherein the first average grain size of about 2.0 μm to about 4.0 μm, and the second average grain size of about 0.1 μm to about 2.0 μm.