Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.
1. A solid-state radiation transducer device, comprising:
a radiation transducer including
a first semiconductor material,
a second semiconductor material, and
an active region between the first semiconductor material and the second semiconductor material;
a first contact electrically coupled to the first semiconductor material;
a via having a first end portion and an opposite second end portion, wherein the via extends from its first end portion through the first contact, through the first semiconductor material, and through the active region toward its second end portion, and wherein the second end portion of the via is at the second semiconductor material;
a second contact electrically coupled to the second semiconductor material, the second contact including
a transparent conductive material having a first major surface at the second end portion of the via in direct contact with the second semiconductor material, and an opposite second major surface at the first end portion of the via spaced apart from the second semiconductor material, and
a reflective conductive material in direct contact with the second major surface of the transparent conductive material; and
a transparent dielectric material directly contacting the transparent conductive material within the via, wherein the transparent dielectric material and the transparent conductive material completely fill the via.
2. The solid-state radiation transducer device of claim 1 , wherein the transparent conductive material includes indium tin oxide, zinc oxide, or a combination thereof.
3. The solid-state radiation transducer device of claim 1 , wherein the reflective conductive material is in direct contact with the transparent conductive material along a flat interface at the first end portion of the via.
4. The solid-state radiation transducer device of claim 1 , wherein the second major surface of the transparent conductive material is planarized.
5. The solid-state radiation transducer device of claim 1 , wherein the via tapers inwardly from its first end portion toward its second end portion.
6. The solid-state radiation transducer device of claim 1 , wherein the transparent dielectric material is partially within the via and partially outside the via.
7. The solid-state radiation transducer device of claim 6 , wherein the reflective conductive material directly contacts the transparent dielectric material outside the via.
8. The solid-state radiation transducer device of claim 7 , wherein an interface between the reflective conductive material and the transparent dielectric material outside the via is coplanar with the second major surface of the transparent conductive material.
9. The solid-state radiation transducer device of claim 1 , wherein the via is elongate.
10. A light-emitting diode device, comprising:
a light-emitting diode including
a first semiconductor material,
a second semiconductor material, and
a light-emitting region between the first semiconductor material and the second semiconductor material;
a first contact electrically coupled to the first semiconductor material;
a via having a first end portion and an opposite second end portion, wherein the via extends from its first end portion through the first contact, through the first semiconductor material, and through the light-emitting region toward its second end portion, and wherein the second end portion of the via is at the second semiconductor material;
a second contact electrically coupled to the second semiconductor material, the second contact including
a transparent conductive material having a first major surface at the second end portion of the via in direct contact with the second semiconductor material, and an opposite second major surface at the first end portion of the via spaced apart from the second semiconductor material, and
a reflective conductive material in direct contact with the second major surface of the transparent conductive material; and
a transparent dielectric material directly contacting the transparent conductive material within the via, wherein the transparent dielectric material and the transparent conductive material completely fill the via.
11. The light-emitting diode device of claim 10 , wherein the transparent conductive material includes indium tin oxide, zinc oxide, or a combination thereof.
12. The light-emitting diode device of claim 10 , wherein the second major surface of the transparent conductive material is planarized.
13. The light-emitting diode device of claim 10 , wherein the via tapers inwardly from its first end portion toward its second end portion.
14. The solid-state radiation transducer device of claim 10 , wherein the transparent dielectric material is partially within the via and partially outside the via.
15. The light-emitting diode device of claim 14 , wherein the reflective conductive material directly contacts the transparent dielectric material outside the via.
16. The light-emitting diode device of claim 15 , wherein an interface between the reflective conductive material and the transparent dielectric material outside the via is coplanar with the second major surface of the transparent conductive material.
17. The light-emitting diode device of claim 10 , wherein the via is elongate.
18. The light-emitting diode device of claim 10 , wherein:
the second semiconductor material includes N-type gallium nitride, and
the reflective conductive material includes silver.
19. A solid-state radiation transducer device, comprising:
a radiation transducer including
a first semiconductor material,
a second semiconductor material, and
an active region between the first semiconductor material and the second semiconductor material;
a first contact electrically coupled to the first semiconductor material;
a first via having a first opening and extending from the first opening toward the second semiconductor material;
a second via having a second opening and extending from the second opening toward the second semiconductor material; and
a second contact electrically coupled to the second semiconductor material, the second contact including
a first transparent buried-contact element within the first via, the first transparent buried-contact element having a first end portion spaced apart from the second semiconductor material and an opposite second end portion directly contacting the second semiconductor material,
a second transparent buried-contact element within the second via, the second transparent buried-contact element having a first end portion spaced apart from the second semiconductor material and an opposite second end portion directly contacting the second semiconductor material, and
a reflective base having a planar surface adjacent to the first end portion of the first transparent buried-contact element, adjacent to the first end portion of the second transparent buried-contact element, and extending continuously over an entirety of the first opening, over an entirety of the second opening, and between the first and second openings.
20. The solid-state radiation transducer device of claim 19 , wherein the first and second transparent buried-contact elements include indium tin oxide, zinc oxide, or a combination thereof.
21. The solid-state radiation transducer device of claim 19 , wherein the first end portion of the first transparent buried-contact element and the first end portion of the second transparent buried-contact element are planarized.
22. A light-emitting diode device, comprising:
a light-emitting diode including
a first semiconductor material,
a second semiconductor material, and
a light-emitting region between the first semiconductor material and the second semiconductor material;
a first contact electrically coupled to the first semiconductor material;
a first via having a first opening and extending from the first opening toward the second semiconductor material;
a second via having a second opening and extending from the second opening toward the second semiconductor material; and
a second contact electrically coupled to the second semiconductor material, the second contact including
a first transparent buried-contact element within the first via, the first transparent buried-contact element having a first end portion spaced apart from the second semiconductor material and an opposite second end portion directly contacting the second semiconductor material,
a second transparent buried-contact element within the second via, the second transparent buried-contact element having a first end portion spaced apart from the second semiconductor material and an opposite second end portion directly contacting the second semiconductor material, and
a reflective base having a planar surface adjacent to the first end portion of the first transparent buried-contact element, adjacent to the first end portion of the second transparent buried-contact element, and extending continuously over an entirety of the first opening, over an entirety of the second opening, and between the first and second openings.
23. The light-emitting diode device of claim 22 , wherein the first and second transparent buried-contact elements include indium tin oxide, zinc oxide, or a combination thereof.
24. The light-emitting diode device of claim 22 , wherein the first end portion of the first transparent buried-contact element and the first end portion of the second transparent buried-contact element are planarized.
25. The light-emitting diode device of claim 22 , wherein:
the second semiconductor material includes N-type gallium nitride, and
the base includes silver.