Two wavelength range photodiode demultiplexer and methods for using the same

1. A method for demultiplexing optical signals, the method comprising:

a first photodiode accepting first optical signals in a first range of wavelengths with second optical signals in a second range of wavelengths greater than the first range;

generating first electrical signals in the first photodiode in response to the optical signals in the first range;

a second photodiode accepting the optical signals in the second range;

providing the first photodiode overlying the second photodiode, where the first photodiode has a first coefficient of absorption associated with the first range of wavelengths and the second photodiode has a second coefficient of absorption and a half value layer (HVL) associated with the second range of wavelengths, and wherein the first photodiode has thickness less than the HVL of the second photodiode; and

generating second electrical signals in the second photodiode in response to the second optical signals.

2. The method of claim 1 wherein generating the first electrical signals includes the first photodiode substantially absorbing photons associated with the optical signals in the first range; and,

the method further comprising:

the first photodiode substantially passing photons associated with the optical signals in the second range.

3. The method of claim 2 further comprising:

focusing the optical signals in the second range passing through the first photodiode on a target region of the second photodiode.

4. The method of claim 1 wherein accepting the optical signals in the first range includes a gallium arsenide (GaAs) photodiode accepting the optical signals in the first range; and,

wherein accepting the optical signals in the second range includes an indium gallium arsenide (InGaAs) photodiode accepting the optical signals in the second range.

5. The method of claim 1 wherein accepting the optical signals in the first range includes a GaAs photodiode accepting the optical signals in the first range; and,

wherein accepting the optical signals in the second range includes a silicon/germanium (SiGe) photodiode accepting the optical signals in the second range.

6. A photodiode demultiplexer comprising:

a first photodiode to accept optical signals in a first range of wavelengths;

a second photodiode underlying the first photodiode to accept optical signals in a second range of wavelengths, longer than the first range;

wherein the first photodiode substantially absorbs photons associated with the optical signals in the first range and substantially passes photons associated with the optical signals in the second range;

wherein the first photodiode is formed in a first substrate with a bottom surface overlying the second photodiode;

wherein the second photodiode is formed in a target region on a second substrate having a top surface; and

the photodiode demultiplexer further comprising:

a lens formed on the first substrate bottom surface, configured to focus the optical signals in the second range passing through the first photodiode on the target region of the second photodiode.

7. The photodiode demultiplexer of claim 6 wherein the first photodiode is a gallium arsenide (GaAs) photodiode; and,

wherein the second photodiode is an indium gallium arsenide (InGaAs) photodiode.

8. The photodiode demultiplexer of claim 6 wherein the first photodiode is a GaAs photodiode; and,

wherein the second photodiode is a silicon/germanium (SiGe) photodiode.

9. A photodiode demultiplexer comprising:

a first photodiode to accept optical signals in a first range of wavelengths, wherein the first photodiode is formed in a first substrate having a first coefficient of absorption associated with the first range of wavelengths, and a first thickness; and

a second photodiode underlying the first photodiode to accept optical signals in a second range of wavelengths, longer than the first range, wherein the second photodiode has a second coefficient of absorption and a half value layer (HVL) associated with the second range of wavelengths, where the HVL is greater than the first substrate first thickness.

10. A system employing a multipath coupled lens and a photodiode demultiplexer, the system comprising:

a lens comprising:

a first surface;

a second surface;

a first photodiode to accept optical signals from the lens first surface in a first range of wavelengths;

a second photodiode underlying the first photodiode to accept optical signals in a second range of wavelengths, longer than the first range, from the lens first surface;

wherein the first photodiode substantially absorbs photons associated with the optical signals in the first range, and substantially passes photons associated with the optical signals in the second range;

wherein the first photodiode is formed in a first substrate with a bottom surface overlying the second photodiode;

wherein the second photodiode is formed in a target region on a second substrate having a top surface; and,

the photodiode demultiplexer further comprising:

a lens formed on the first substrate bottom surface, configured to focus the optical signals in the second range passing through the first photodiode on the target region of the second photodiode.

11. The system of claim 10 wherein the first photodiode is a gallium arsenide (GaAs) photodiode; and,

wherein the second photodiode is an indium gallium arsenide (InGaAs) photodiode.

12. The system of claim 10 wherein the first photodiode is a GaAs photodiode; and,

wherein the second photodiode is a silicon/germanium (SiGe) photodiode.

13. A system employing a multipath coupled lens and a photodiode demultiplexer, the system comprising:

a lens comprising:

a first surface;

a second surface;

a first photodiode to accept optical signals from the lens first surface in a first range of wavelengths;

a second photodiode underlying the first photodiode to accept optical signals in a second range of wavelengths, longer than the first range, from the lens first surface;

wherein the first photodiode is formed in a first substrate having a first coefficient of absorption associated with the first range of wavelengths, and a first thickness; and

wherein the second photodiode has a second coefficient of absorption and a half value layer (HVL) associated with the second range of wavelengths, where the HVL is greater than the first substrate first thickness.

14. A system employing a multipath coupled lens and a photodiode demultiplexer, the system comprising:

a lens comprising:

a first surface;

a second surface;

a first photodiode to accept optical signals from the lens first surface in a first range of wavelengths;

a second photodiode underlying the first photodiode to accept optical signals in a second range of wavelengths, longer than the first range, from the lens first surface;

two pass-through structures, each pass-through structure formed between the lens first and second surfaces, each pass-through structure having a first aperture formed in the first surface to accept a pass-through beam of light and a second aperture formed in the second surface to transmit the pass-through beam of light into free space, and where each pass-through structure is formed along a corresponding offset axis located between the first surface center and a first surface perimeter; and

two light sources to transmit a pass-through optical signals into free space towards a corresponding pass-through structure.