Circuits and methods for reducing minimum supply for register file cells

1. An apparatus comprising:

a memory cell; and

a transistor, coupled to the memory cell, which is operable to provide a virtual power supply to transistors of the memory cell,

wherein the transistor is operable to float the virtual power supply during a first phase of write operation,

wherein the transistor has a gate terminal which is coupled to a node having a control signal, and

wherein the transistor is coupled to a logic unit which is operable to adjust shape or timing of the control signal.

2. The apparatus of claim 1 , wherein the transistor is operable to provide the virtual power supply to the memory cell after the first phase of write operation, and wherein the transistor comprises a plurality of transistors coupled in parallel to one another.

3. The apparatus of claim 2 , wherein each transistor of the plurality of transistors is operable to receive a control signal to:

turn on the transistor;

turn off the transistor; or

change current drive strength of the transistor.

4. The apparatus of claim 1 , wherein the transistor is coupled to a plurality of memory cells to provide the virtual power supply to the plurality of memory cells, and wherein the memory cell is part of the plurality of memory cells.

5. The apparatus of claim 1 , wherein the transistor is P-type transistor.

6. The apparatus of claim 1 , wherein the transistor is coupled to a logic unit that generates the control signal, and wherein the logic unit is operable to cause the transistor to droop the virtual power supply.

7. The apparatus of claim 1 , wherein the control signal is at least one of:

a programmable signal; or

a logical low level signal.

8. The apparatus of claim 1 , wherein the memory cell is at least on of:

a 6T SRAM cell;

a 8T cell; or

a 16T cell.

9. The apparatus of claim 1 , wherein the transistor is operable to droop the virtual power supply.

10. The apparatus of claim 9 , wherein the transistor is operable to droop the virtual power supply when a write operation for the memory cell is enabled.

11. The apparatus of claim 9 , wherein the memory cell includes transistors having sizing to be such that the droop to the virtual power supply is large enough for conducting a write operation for the memory cell but short enough in duration to avoid data loss in a non written-to cell.

12. The apparatus of claim 1 , wherein the transistor is operable to disconnect the virtual power supply from a main power supply.

13. A processor comprising:

a group of memory cells; and

a transistor, coupled to the group of memory cells, which is operable to provide a virtual power supply to the group of memory cells,

wherein the transistor is operable to float the virtual power supply during a first phase of write operation,

wherein the transistor has a gate terminal which is coupled to a node having a control signal, and

wherein the transistor is coupled to a logic unit which is operable to adjust shape or timing of the control signal.

14. The processor of claim 13 , wherein the transistor comprises a plurality of transistors coupled in parallel to one another, and wherein each transistor of the plurality of transistors is operable to receive the control signal to:

turn on the transistor;

turn off the transistor; or

change current drive strength of the transistor.

15. The processor of claim 13 , wherein the transistor is coupled to a logic unit which is operable to generate the control signal for the transistor, wherein the logic unit is operable to cause the transistor to droop the virtual power supply, and wherein the transistor is operable to provide the virtual power supply to the group of memory cells after the first phase of write operation.

16. A system comprising:

a wireless network interface; and

a processor communicatively coupled to the wireless network interface, the processor including:

a memory cell; and

a transistor, coupled to the memory cell, which is operable to provide a virtual power supply to transistors of the memory cell,

wherein the transistor is operable to float the virtual power supply during a first phase of write operation,

wherein the transistor has a gate terminal which is coupled to a node having a control signal, and

wherein the transistor is coupled to a logic unit which is operable to adjust shape or timing of the control signal.

17. The system of claim 16 , wherein the memory cell is at least one of:

a 6T SRAM cell;

a 8T cell;

a 16T cell;

DRAM cell; or

flash memory cell.

18. The system of claim 16 , wherein the transistor is coupled to a logic unit which is operable to generate the control signal for the transistor, wherein the logic unit is operable to cause the transistor to droop the virtual power supply, and wherein the transistor is operable to provide the virtual power supply to the memory cell after the first phase of write operation.