Transflective liquid crystal display device and method for manufacturing the same
A transflective type LCD device and a method for manufacturing the same is disclosed, in which an aperture ratio of a reflective part is improved, and manufacturing process is simplified by decreasing the number of masks for forming contact holes. The transflective type LCD device includes a plurality of gate and data lines crossing each other, defining a plurality of pixel regions; a thin film transistor at a crossing point of the gate and data lines; a lower storage electrode formed by one portion of a preceding gate line, and an upper storage electrode above the lower storage electrode having a gate insulating layer in between; a transmitting electrode in contact the upper storage electrode; and a reflective electrode in contact with the transmitting electrode in the reflective part of the pixel region wherein the transmitting electrode is in between the reflective electrode and the substrate.
1. A method for manufacturing a transflective type LCD device having a unit pixel region with a reflective part and a transmitting part comprising:
forming a plurality of gate lines in one direction and gate electrodes protruding from the gate lines and a lower storage electrode protruding from a preceding gate line;
forming a plurality of data lines substantially perpendicular to the plurality of gate lines to define pixel regions and source electrodes protruding from the data lines at one side;
forming a drain electrode integral with an upper storage electrode of the preceding gate line, the drain electrode forming a thin film transistor along with the gate electrode and the source electrode;
forming a buffer insulating layer with a contact hole adjacent to the upper storage electrode on a substrate including the thin film transistor;
forming a transmitting electrode in the pixel region in contact with the upper storage electrode through the contact hole;
forming a passivation layer having a first transmitting hole with an inclination exposing a predetermined portion of the transmitting electrode; and
forming a reflective electrode in the reflective part of the pixel region in contact with the transmitting electrode, wherein the reflective electrode is on the inclination of the passivation layer and the bottom corners of the first transmitting hole; and
wherein the reflective electrode in the reflective part of the pixel region is not contacted with the drain electrode and the upper storage electrode.
2. The method of claim 1 , wherein the buffer insulating layer is formed of a silicon nitride layer.
3. The method of claim 1 , wherein the contact hole is formed by forming a photoresist pattern to open one portion of the upper storage electrode on the buffer insulating layer and etching the buffer insulating layer with the photoresist pattern as a mask.
4. The method of claim 1 , further comprising:
forming a gate insulating layer on the substrate including the gate electrode after forming the gate line;
forming a semiconductor pattern having first and second semiconductor layers on the gate insulating layer above the gate electrode; and
forming an active layer and an ohmic contact layer with an etching process of the semiconductor pattern by using the source/drain electrode as masks.
5. The method of claim 1 , wherein the transmitting electrode is formed using a wet-etch process.