Apparatus and method for controlled particle beam manufacturing
A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
1. A method of implanting particles into a workpiece, the method comprising:
forming a beam of charged particles;
adjusting a longitudinal spacing between the charged particles along the beam; and
directing the beam towards the workpiece in a pattern in an exposure chamber.
2. The method of claim 1 , wherein a dosage of the beam is less than about 5×10 17 charged particles/cm 2 .
3. The method of claim 1 , wherein a dosage of the beam is less than about 5×10 10 charged particles/cm 2 .
4. The method of claim 1 , wherein the workpiece is resistless while directing the beam.
5. The method of claim 1 , further comprising, during directing the beam, exposing a surface of the workpiece to a reactant.
6. The method of claim 1 , further comprising annealing the implanted particles.
7. The method of claim 1 , wherein forming the beam comprises:
forming a stream of the particles;
collimating the stream along an axis of propagation; and
digitizing the stream.
8. The method of claim 1 , wherein forming the beam comprises creating temporally and spatially resolved digital flashes comprising at least one particle per digital flash.
9. The method of claim 1 , wherein directing the beam comprises:
deflecting the beam using a series of deflection stages disposed longitudinally along an axis of propagation of the beam; and
demagnifying the beam.
10. A workpiece manufactured by the method of claim 1 .
11. A method of implanting at least one dopant into a workpiece, the method comprising:
forming a beam comprising a series of particles of at least one ion species;
directing the beam towards the workpiece; and
during directing, altering at least one parameter of the spacing of the particles in the beam.
12. The method of claim 11 , wherein the parameter comprises ion species.
13. The method of claim 11 , wherein the parameter comprises beam energy.
14. The method of claim 13 , wherein altering the beam energy comprises varying the beam energy between about 5 and 500 keV.
15. The method of claim 11 , wherein the parameter comprises a density of particles in the beam.
16. The method of claim 11 , wherein altering the parameter is during directing the beam across a transistor on the workpiece.
17. The method of claim 11 , wherein altering the parameter is during directing the beam across a die on the workpiece.
18. The method of claim 11 , wherein forming the beam comprises forming a digital beam.
19. A workpiece manufactured by the method of claim 11 .
20. A method of processing to implant material into a workpiece, the method comprising:
directing a beam comprising charged particles which are spaced along a longitudinal direction of the beam onto the workpiece in a pattern in an exposure chamber, such that charged particles of the beam are sequentially directed to different positions on the workpiece.