Semiconductor device and method for manufacturing the semiconductor device
View Patent ↗An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate;
forming a gate insulating layer comprising an oxide over the gate electrode layer;
performing a first oxygen radical treatment on a surface of the gate insulating layer;
forming an oxide semiconductor layer over the gate insulating layer after the first oxygen radical treatment;
performing a second oxygen radical treatment on a surface of the oxide semiconductor layer; and
forming an insulating film on the oxide semiconductor layer after the second oxygen radical treatment.
2. The method according to claim 1 , further comprising the steps of:
forming source and drain regions over the oxide semiconductor layer; and
forming source and drain electrode layers over the source and drain regions,
wherein the gate insulating layer and the oxide semiconductor layer are formed successively without being exposed to the air.
3. The method according to claim 1 , wherein the insulating film comprises a first layer comprising an oxide and a second layer comprising a nitride.
4. The method according to claim 1 , wherein the first oxygen radical treatment is performed by using ozone.
5. The method according to claim 1 , wherein the second oxygen radical treatment is performed by using ozone.
6. The method according to claim 2 , wherein the gate insulating layer, the oxide semiconductor layer, the source and drain regions, and the source and drain electrode layers are formed by a sputtering method.
7. The method according to claim 1 , wherein the oxide semiconductor layer comprises In, Ga and Zn.
8. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate;
forming a gate insulating layer comprising an oxide over the gate electrode layer;
performing an oxygen radical treatment on a surface of the gate insulating layer;
forming an oxide semiconductor layer over the gate insulating layer after the oxygen radical treatment; and
forming an insulating film on the oxide semiconductor layer.
9. The method according to claim 8 , further comprising the steps of:
forming source and drain regions over the oxide semiconductor layer; and
forming source and drain electrode layers over the source and drain regions,
wherein the gate insulating layer and the oxide semiconductor layer are formed successively without being exposed to the air.
10. The method according to claim 8 , wherein the insulating film comprises a first layer comprising an oxide and a second layer comprising a nitride.
11. The method according to claim 8 , wherein the oxygen radical treatment is performed by using ozone.
12. The method according to claim 8 , wherein the oxide semiconductor layer comprises In, Ga and Zn.
13. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate;
forming a gate insulating layer over the gate electrode layer;
forming an oxide semiconductor layer over the gate insulating layer;
performing an oxygen radical treatment on a surface of the oxide semiconductor layer; and
forming an insulating film on the oxide semiconductor layer after the oxygen radical treatment,
wherein the oxygen radical treatment is performed by using ozone.
14. The method according to claim 13 , further comprising the steps of:
forming source and drain regions over the oxide semiconductor layer; and
forming source and drain electrode layers over the source and drain regions,
wherein the gate insulating layer and the oxide semiconductor layer are formed successively without being exposed to the air.
15. The method according to claim 13 , wherein the insulating film comprises a first layer comprising an oxide and a second layer comprising a nitride.
16. The method according to claim 13 , wherein the oxide semiconductor layer comprises In, Ga and Zn.
17. The method according to claim 13 , wherein the gate insulating layer comprises a material selected from the group consisting of silicon oxide, aluminum oxide, magnesium oxide, aluminum nitride film and yttrium oxide.
18. The method according to claim 13 , wherein the gate insulating layer comprises silicon and oxygen.
19. The method according to claim 13 , wherein a concentration of hydrogen in the gate insulating layer is 2×10 19 cm −3 or less.