Grain refinement by precipitate formation in Pb-free alloys of tin
View Patent ↗Micro-addition of a metal to a Sn-based lead-free C4 ball is employed to enhance reliability. Specifically, a metal having a low solubility in Sn is added in a small quantity corresponding to less than 1% in atomic concentration. Due to the low solubility of the added metal, fine precipitates are formed during solidification of the C4 ball, which act as nucleation sites for formation multiple grains in the solidified C4 ball. The fine precipitates also inhibit rapid grain growth by plugging grain boundaries and act as agents for pinning dislocations in the C4 ball. The grain boundaries enable grain boundary sliding for mitigation of stress during thermal cycling of the semiconductor chip and the package on the C4 ball. Further, the fine precipitates prevent electromigration along the grain boundaries due to their pinned nature.
1. A semiconductor structure comprising:
a metal interconnect structure located on a semiconductor substrate;
a Controlled Collapse Chip connection (C4) pad on said metal interconnect structure;
aC4 ball located directly on said C4 pad comprising:
at least one metal selected from Au, Pd and Pt and having an atomic concentration greater than 0% and less than 5%;
Sn at an atomic concentration of at least 95% and;
wherein said at least one metal is present in said C4 ball as fine precipitates in grain boundaries between Sn-containing regions.
2. A method of forming a semiconductor structure comprising:
applying a Controlled Collapse Chip connection (C4) ball on a metalic pad, wherein said C4 ball comprises Sn at an ataomic concentration of at leat 95% and at least one metal selected from Au, Pd and Pt, wherein each of said at least one metal has an atomic concentration greater than 0% and less than 5%; and
reflowing said C4 ball at an elevated temperature, thereby inducing formation of precipitate of said at least one metal at grain boundaries with said C4 ball.
3. The method of claim 2 , wherein said C4 ball is reflowed at a temperature from about 200° C. to about 260° C.
4. The method of claim 2 , wherein said at least one metal includes Au at an atomic concentration greater than 0% and less than 3.0%.
5. The method of claim 2 , wherein the said at least one metal includes Pd at an atomic concentration greater than 0% and less than 3.0%.
6. The method of claim 2 , wherein the said at least one metal includes Pt at an atomic concentration greater than 0% and less than 3.0%.
7. A semiconductor structure comprising:
a metal interconnect structure located on a semiconductor substrate;
a Controlled Collapse Chip connection (C4) pad on said metal interconnect structure;
a C4 ball located directly on said C4 pad:
wherein said C4 ball has a diameter from about 10 microns to about 200 microns; and
wherein said C4 ball comprises:
at least one metal selected from Au, Pd and Pt and having an atomic concentration greater than 0% and less than 5%; and
Sn at an atomic concentration of at least 95%.