Semiconductor device, physical information acquiring apparatus, and signal reading-out method
A semiconductor device includes: an element array portion in which unit elements are disposed in a matrix; and a signal processing portion including a signal processing circuit executing predetermined signal processing based on unit signals outputted from the circuit elements, respectively, every column, in which a function of the signal processing circuit is controlled in such a way that power consumption of the signal processing circuit concerned corresponding to the unit elements each not required becomes lower in a phase of an element selection mode in which only information on a part of the unit pixels for one row in the element array portion is required than in a phase of a normal operation mode.
1. A semiconductor device, comprising:
a pixel array portion in which unit pixels are disposed in a matrix of columns and rows, wherein vertical signal lines respectively correspond to columns of the unit pixels to provide readout signals from the unit pixels in the respective columns;
an AD conversion portion including comparing units and counter units,
the comparing units being respectively configured to compare a reference signal and the readout signals from the respective columns,
the counter units being configured to perform a count operation in a count operation effective period based on comparison results of the comparing units from the respective columns,
the AD conversion portion performing AD conversion processing for acquiring digital data of the readout signals on the basis of output data of the counter units; and
an operating current supplying portion, including transistors corresponding to the respective columns, each transistor having a gate terminal, a first current terminal and a second current terminal, the first current terminal being connected to a respective vertical signal line at a node between the pixel array portion and the AD conversion portion, the second current terminal being connected to a reference current source, and the gate terminal being connected to a column stop control signal line,
wherein power consumption is controlled to be lower in a pixel selection mode in which only information on a part of the unit pixels for one row in the pixel array portion is required than in a normal operation mode.
2. The semiconductor device according to claim 1 , wherein each of the comparing units of the AD conversion portion include an enable input, the enable input being connected to the column stop control signal line that is connected to the gate terminal of the transistor in its respective column.
3. The semiconductor device according to claim 2 , wherein each of the counter units of the AD conversion portion include an input that is connected to the column stop control signal line that is connected to the gate terminal of the transistor in its respective column.
4. The semiconductor device according to claim 1 , wherein each of the counter units of the AD conversion portion include an input that is connected to the column stop control signal line that is connected to the gate terminal of the transistor in its respective column.
5. The semiconductor device according to claim 1 , wherein the power consumption is controlled to be lower by disconnecting the AD conversion portion from a power source supply for a vertical signal line of a pixel unit whose information is not required.
6. A solid-state imaging apparatus comprising an imaging lens and the semiconductor device according to claim 1 .
7. The solid-state imaging apparatus according to claim 6 , wherein each of the comparing units of the AD conversion portion include an enable input, the enable input being connected to the column stop control signal line that is connected to the gate terminal of the transistor in its respective column.
8. The solid-state imaging apparatus according to claim 7 , wherein each of the counter units of the AD conversion portion include an input that is connected to the column stop control signal line that is connected to the gate terminal of the transistor in its respective column.
9. The solid-state imaging apparatus according to claim 6 , wherein each of the counter units of the AD conversion portion include an input that is connected to the column stop control signal line that is connected to the gate terminal of the transistor in its respective column.
10. The solid-state imaging apparatus according to claim 6 , wherein the power consumption is controlled to be lower by disconnecting the AD conversion portion from a power source supply for a vertical signal line of a pixel unit whose information is not required.