LIGHT-EMITTING DEVICES COMPRISING NON-LINEAR ELECTRICALLY PROTECTIVE MATERIAL
A circuit comprising an array of light emitting diodes (LEDs), and a layer of VSD material positioned to contact an input and an output of each LED in the array of LEDs, so as to protect each LED from both a forward surge and a reverse surge of voltage on the array of LEDs. The layer of VSD material is able to switch into a carrying current state in response to either of the forward or reverse surge exceeding a characteristic voltage level (V CL ) of the VSD material.
1 . A circuit comprising:
an array of light emitting diodes (LEDs);
a layer of VSD material positioned to contact an input and an output of each LED in the array of LEDs, so as to protect each LED from both a forward surge and a reverse surge of voltage on the array of LEDs, the layer of VSD material switching into carrying current in response to either of the forward or reverse surge exceeding a characteristic voltage level (V CL ) of the VSD material.
2 . The circuit of claim 1 , further comprising an electrostatic discharge (ESD) plane that is connected to the layer of VSD material.
3 . The circuit of claim 2 , further comprising a via that interconnects the layer of VSD material to the array of LEDs.
4 . The circuit of claim 3 , wherein the layer of VSD material is vertically switched in order to electrically interconnect the ESD plane to individual LEDs in the array of LEDs.
5 . The circuit of claim 2 , wherein the layer of VSD material is arranged to protect individual LEDs in the array against a transient voltage that is greater than a reverse breakdown voltage of the individual LEDs in the array of LEDs.
6 . The circuit of claim 2 , wherein the ESD plane is embedded within a substrate on which the array of LEDs are provided.
7 . The circuit of claim 1 , further comprising a conductive element that interconnects at least some of the LEDs in the array of LEDs, and wherein the conductive element is positioned relative to the layer of VSD material to form a control gap with a grounding element that is provided on the layer of VSD material.
8 . The circuit element of claim 7 , wherein the conductive element only partially circumvents the grounding element.
9 . The circuit element of claim 7 , wherein the conductive element completely surrounds the grounding element.
10 . The circuit element of claim 2 , wherein the ESD plane is shaped to operate as a heat sink for the array of LEDs.
11 . The circuit of claim 2 , wherein a voltage (V node ) at a node of the ESD plane is provided so that V CL is larger than an operating voltage V o of an individual LED in the array of LEDs.
12 . The circuit of claim 2 , wherein the array of LEDs include a first set of LEDs that are arranged in series.
13 . The circuit of claim 5 , wherein the array of LEDs include a second set of LEDs that are arranged in series, and wherein the first set of LEDs and the second set of LEDs are collectively arranged in parallel.
14 . The circuit of claim 1 , wherein the layer of VSD material is formed from a varistor.
15 . A device comprising:
plurality of light emitting diodes (LEDs);
a layer of VSD material positioned to contact an input and an output of each LED in the plurality of LEDs, so as to protect each LED from both a forward surge and a reverse surge of voltage on the array of LEDs, the layer of VSD material switching into carrying current in response to either of the forward or reverse surge exceeding a characteristic voltage level (V CL ) of the VSD material.
16 . The device of claim 15 , wherein the device is a light emitting diode (LED) lighting module.
17 . The device of claim 15 , wherein the device is a light emitting diode (LED) display module.