IP Library Granted Patent US 9,065,421
Granted Patent B2
US 9,065,421 · App. 13/362,321 · Granted Jun 23, 2015

Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making

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Quick Facts
Patent No.
US 9,065,421
App. No.
13/362,321
Granted
Jun 23, 2015
Kind
B2
Abstract

A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.

Claims (27)

1. An acoustic resonator, comprising:

a first electrode;

a second electrode;

a first piezoelectric layer and a second piezoelectric layer between the first and second electrodes, the first and second piezoelectric layers being comprised of respective different piezoelectric materials;

a third electrode between the first and second piezoelectric layers; and

a third piezoelectric layer laminated to the first piezoelectric layer, the third piezoelectric layer comprising a piezoelectric material different than the piezoelectric material of the first piezoelectric layer.

2. The acoustic resonator of claim 1 , wherein a c-axis orientation of the first piezoelectric layer is the same as a c-axis orientation of the second piezoelectric layer.

3. The acoustic resonator of claim 1 , wherein a c-axis orientation of the first piezoelectric layer is opposite a c-axis orientation of the second piezoelectric layer.

4. The acoustic resonator of claim 1 , wherein the first piezoelectric layer comprises AlN and the second piezoelectric layer comprises ZnO.

5. The acoustic resonator of claim 4 , wherein the first and second electrodes are comprised of W or Mo.

6. The acoustic resonator of claim 1 , wherein the first and second electrodes are electrically connected to each other.

7. The acoustic resonator of claim 1 , further comprising a fourth piezoelectric layer laminated to the second piezoelectric layer, the fourth piezoelectric layer comprising a piezoelectric material different than the piezoelectric material of the second piezoelectric layer.

8. The acoustic resonator of claim 7 , wherein a c-axis orientation of the fourth piezoelectric layer is the same as a c-axis orientation of the second piezoelectric layer.

9. The acoustic resonator of claim 7 , wherein a c-axis orientation of the fourth piezoelectric layer is opposite a c-axis orientation of the second piezoelectric layer.

10. The acoustic resonator of claim 1 , having a resonance frequency set based on respective c-axis orientations of the first and second piezoelectric layers.

11. The acoustic resonator of claim 1 , wherein a c-axis orientation of the third piezoelectric layer is opposite a c-axis orientation of the first piezoelectric layer.

12. The acoustic resonator of claim 1 , wherein a c-axis orientation of the third piezoelectric layer is the same as a c-axis orientation of the first piezoelectric layer.

13. A method of making an acoustic resonator, the method comprising:

forming a first piezoelectric layer having a first c-axis orientation on first electrode;

forming a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer,

the first and second piezoelectric layers comprised of respective different piezoelectric materials;

selecting the second c-axis orientation during formation of the second piezoelectric layer to set a resonance frequency of the acoustic resonator; and

forming a second electrode on the second piezoelectric layer;

forming a third electrode between the first and second piezoelectric layers;

electrically connecting the first and second electrodes together; and

laminating a third piezoelectric layer to the first piezoelectric layer, the third piezoelectric layer comprising a piezoelectric material different than a piezoelectric material of the first piezoelectric layer, wherein the first and second c-axis orientations are selected to be the same to set a first resonance frequency and are selected to be opposite to set a different second resonance frequency.

14. The method of claim 13 , thither comprising laminating a fourth piezoelectric layer to the second piezoelectric layer, the fourth piezoelectric layer comprising a piezoelectric material different than a piezoelectric material of the second piezoelectric layer.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE PREVIOUSLY RECORDED AT REEL: 047422 FRAME: 0464. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 6, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 048883/0702 →
MERGER Recorded Oct 5, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047422/0464 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 030369/0471 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2012
From: FENG, CHRIS; CHOY, JOHN; GRANNEN, KEVIN J.; NIKKEL, PHIL; YEH, TOM
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 027624/0920 →