Pattern matching optical proximity correction
View Patent ↗Aspects of the invention relate to techniques for improving speed and consistency of OPC processes based on pattern matching. Pattern matching may be performed on a layout design to determine one or more arrays in the layout design that comprise arrays of identical layout patterns of which each matches a reference pattern. The one or more arrays may then be partitioned into core portions and boundary portions. The OPC process information for the reference pattern may be applied to the core portions, while a conventional OPC process may be performed on the boundary portions and layout regions outside of the one or more arrays.
1. A method of pattern matching optical proximity correction, comprising:
receiving layout data for a layout design and layout information for a reference pattern, the layout information for the reference pattern comprising pre-OPC layout data for the reference pattern and first OPC (optical proximity correction) process information for the reference pattern;
performing, with one or more programmable computing devices, pattern matching on the layout design to determine one or more matching pattern arrays in the layout design, each of the one or more matching pattern arrays comprising an array of identical layout patterns of which each matches the reference pattern;
partitioning the one or more matching pattern arrays into core portions and boundary portions; and
applying the first OPC process information for the reference pattern to the core portions to derive second OPC process information.
2. The method recited in claim 1 , further comprising:
performing OPC on regions of the layout design that do not belong to the one or more matching pattern arrays to derive third OPC process information.
3. The method recited in claim 1 , further comprising:
performing OPC on the boundary portions and regions of the layout design that do not belong to the one or more matching pattern arrays to derive third OPC process information.
4. The method recited in claim 1 , wherein the reference pattern comprises a cell.
5. The method recited in claim 4 , wherein the cell is a memory cell.
6. The method recited in claim 1 , wherein the reference pattern comprises a group of cells.
7. The method recited in claim 1 , wherein the partitioning is based on radius of influence.
8. A non-transitory processor-readable medium storing processor-executable instructions for causing one or more processors to perform a method of pattern matching optical proximity correction, the method comprising:
receiving layout data for a layout design and layout information for a reference pattern, the layout information for the reference pattern comprising pre-OPC layout data for the reference pattern and first OPC (optical proximity correction) process information for the reference pattern;
performing pattern matching on the layout design to determine one or more matching pattern arrays in the layout design, each of the one or more matching pattern arrays comprising an array of identical layout patterns of which each matches the reference pattern;
partitioning the one or more matching pattern arrays into core portions and boundary portions; and
applying the first OPC process information for the reference pattern to the core portions to derive second OPC process information.
9. The non-transitory processor-readable medium recited in claim 8 , wherein the method further comprising:
performing OPC on regions of the layout design that do not belong to the one or more matching pattern arrays to derive third OPC process information.
10. The non-transitory processor-readable medium recited in claim 8 , wherein the method further comprising:
performing OPC on the boundary portions and regions of the layout design that do not belong to the one or more matching pattern arrays to derive third OPC process information.
11. The non-transitory processor-readable medium recited in claim 8 , wherein the reference pattern comprises a cell.
12. The non-transitory processor-readable medium recited in claim 8 , wherein the reference pattern comprises a group of cells.
13. The non-transitory processor-readable medium recited in claim 8 , wherein the partitioning is based on radius of influence.
14. A system comprising one or more processors, the one or more processors programmed to perform a method of pattern matching optical proximity correction, the method comprising:
receiving layout data for a layout design and layout information for a reference pattern, the layout information for the reference pattern comprising pre-OPC layout data for the reference pattern and first OPC (optical proximity correction) process information for the reference pattern;
performing pattern matching on the layout design to determine one or more matching pattern arrays in the layout design, each of the one or more matching pattern arrays comprising an array of identical layout patterns of which each matches the reference pattern;
partitioning the one or more matching pattern arrays into core portions and boundary portions; and
applying the first OPC process information for the reference pattern to the core portions to derive second OPC process information.
15. The system recited in claim 14 , wherein the method further comprising:
performing OPC on regions of the layout design that do not belong to the one or more matching pattern arrays to derive third OPC process information.
16. The system recited in claim 14 , wherein the method further comprising:
performing OPC on the boundary portions and regions of the layout design that do not belong to the one or more matching pattern arrays to derive third OPC process information.
17. The system recited in claim 14 , wherein the reference pattern comprises a cell.
18. The system recited in claim 14 , wherein the reference pattern comprises a group of cells.
19. The system recited in claim 14 , wherein the partitioning is based on radius of influence.