System and method for interfacing large-area electronics with integrated circuit devices
A system and method for interfacing large-area electronics with integrated circuit devices is provided. The system may be implemented in an electronic device including a large area electronic (LAE) device disposed on a substrate. An integrated circuit IC is disposed on the substrate. A non-contact interface is disposed on the substrate and coupled between the LAE device and the IC. The non-contact interface is configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.
1. An electronic device comprising:
a thin film large area electronic (LAE) device disposed on an LAE sheet;
a complementary metal-oxide-semiconductor (CMOS) integrated circuit IC disposed on flex tape packaging;
a non-contact interface comprising a first non-contact interface disposed on the LAE sheet for the LAE device and a second non-contact interface disposed on the flex tape packaging for the IC device, and coupled between the LAE device and the IC, wherein the LAE device has lower performance than the IC device, the non-contact interface being configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.
2. The device of claim 1 , wherein the LAE sheet is plastic based.
3. The device of claim 1 , wherein the non-contact interface comprises at least one of an inductive or capacitive antenna.
4. The device of claim 1 , wherein the LAE device comprises a plurality of LAE sensors and further comprises an LAE scan chain configured to acquired data from the plurality of LAE sensors.
5. The device of claim 1 , wherein the LAE device comprises an LAE sensor configured to generate an alternating current (AC) sensor output and the IC comprises a demodulator configured to demodulate the AC sensor output.
6. The device of claim 5 , further comprising an IC network configured to generate an AC bias for the LAE sensor.
7. The device of claim 1 , further comprising a plurality of ICs, the LAE device comprising a communication path configured to support communication between the plurality of ICs.
8. The device of claim 1 , wherein the LAE device comprises at least one of a sensor or an energy harvesting device.
9. The device of claim 1 , comprising a plurality of strain-gauges disposed on the LAE sheet in a 2 dimensional pattern.
10. The device of claim 1 , wherein the LAE device comprises an energy harvesting device and a sensor.
11. The electronic device of claim 1 wherein the LAE device and the IC operate at different voltages and the non-contact interface provides voltage step up to the LAE device.
12. A method of making an electronic device, the method comprising:
forming a thin film large area electronic (LAE) device on an LAE sheet;
coupling a complementary metal-oxide-semiconductor (CMOS) integrated circuit IC disposed on flex tape packaging to the LAE device;
forming a non-contact interface comprising a first non-contact interface disposed on the LAE sheet for the LAE device and a second non-contact interface disposed on the flex tape packaging for the IC device, and coupled between the LAE device and the IC device, wherein the LAE device has lower performance than the IC device, the non-contact interface being configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.
13. The method of claim 12 , wherein the LAE sheet is plastic based.
14. The method of claim 12 , wherein the non-contact interface is formed with at least one of an inductive or capacitive antenna.
15. The method of claim 12 , wherein the LAE device comprises a plurality of LAE sensors and further comprises an LAE scan chain configured to acquired data from the plurality of LAE sensors.
16. The method of claim 12 , wherein the LAE device comprises an LAE sensor configured to generate an alternating current (AC) sensor output and the IC comprises a demodulator configured to demodulate the AC sensor output.
17. The method of claim 12 , further comprising coupling an IC network to the LAE sheet, the IC network being configured to generate an AC bias for the LAE sensor.
18. The method of claim 12 , further comprising coupling a plurality of ICs to the LAE sheet, the LAE device being formed with a communication path configured to support communication between the plurality of ICs.
19. The method of claim 12 , wherein the LAE device comprises at least one of a sensor or an energy harvesting device.
20. The method of claim 12 , further comprising forming a plurality of strain-gauges disposed on the LAE sheet in a 2 dimensional pattern.
21. The method of claim 12 , wherein the LAE device comprises an energy harvesting device and a sensor.
22. The method of claim 12 wherein the LAE device and the IC operate at different voltages and the non-contact interface provides voltage step up to the LAE device.
23. An electronic device comprising:
a LAE thin film energy harvesting device disposed on an LAE sheet;
LAE thin film power inversion and control circuits disposed on the LAE sheet;
a first non-contact interface disposed on the LAE sheet and a second non-contact device disposed on flex tape packaging for a complementary metal-oxide-semiconductor (CMOS) load device, and coupled between the LAE thin film energy harvesting device and the CMOS load device, wherein the LAE thin film energy harvesting device has a lower energy efficiency than the CMOS load device.
24. The device of claim 23 , wherein the CMOS load device further comprising a battery.