pH sensor, pH measurement method, ion sensor, and ion concentration measurement method
A pH sensor may include a reference electrode including a p-channel field effect transistor (FET) whose gate includes a diamond surface having a hydrogen ion insensitive terminal, and a working electrode.
1. An ion sensor comprising:
a reference electrode including a first p-channel field effect transistor (FET), the first p-channel FET including a first gate portion, a semiconductor surface of the first gate portion including hydrogen-terminated diamond; and
a working electrode including a second p-channel FET, the second p-channel FET including a second gate portion, a semiconductor surface of the second gate portion including hydrogen-terminated diamond.
2. The ion sensor according to claim 1 , wherein the semiconductor surface of the gate portion of the first p-channel FET includes hydrogen ion insensitive terminals in which an oxygen terminal or a fluorine terminal is substituted for part of hydrogen terminals of hydrogen-terminated diamond.
3. The ion sensor according to claim 1 , wherein the semiconductor surface of the gate portion of the first p-channel FET has a content of an sp 3 bonded crystal which is more than a content of an sp 2 bonded crystal.
4. The ion sensor according to claim 1 , wherein the semiconductor surface of the second gate portion includes ion sensitive terminals in which an amino terminal or an oxygen terminal is substituted for part of hydrogen terminals of hydrogen-terminated diamond.
5. The ion sensor according to claim 1 , further comprising a temperature sensor that detects a temperature of at least one of the first and second p-channel FETs.
6. An ion concentration measurement method by using the ion sensor according to any one of claims 1 and 2 - 5 , comprising:
a step of bringing a liquid to be measured into contact with the reference electrode and the working electrode; and
a step of measuring an ion concentration of the liquid to be measured based on outputs of the reference electrode and the working electrode.
7. The ion sensor according to claim 1 , wherein the reference electrode and the working electrode are formed on a common silicon wafer.
8. The ion sensor according to claim 1 , wherein a terminal element in the semiconductor surface of the first gate portion is controlled to cause a potential of the semiconductor surface of the first gate portion to be stabilized when a concentration of hydrogen ions ranges from 1.0×10 −1 mol/L to 1.0×10 −14 mol/L.
9. The ion sensor according to claim 1 , wherein a terminal element in the semiconductor surface of the second gate portion is controlled to cause a potential of the semiconductor surface of the second gate portion to make a linear or non-linear response depending on pH value when a concentration of hydrogen ions ranges from 1.0×10 −1 mol/L to 1.0×10 −14 mol/L.