IP Library › Granted Patent US 8,704,364
Granted Patent B2
US 8,704,364 · App. 13/369,215 · Granted Apr 22, 2014

Reducing stress in multi-die integrated circuit structures

Inventor: Bahareh Banijamali (Los Altos, CA)
Assignee: Xilinx, Inc.
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Quick Facts
Patent No.
US 8,704,364
App. No.
13/369,215
Granted
Apr 22, 2014
Kind
B2
Abstract

An integrated circuit structure can include a first interposer and a second interposer. The first interposer and the second interposer can be coplanar. The integrated circuit structure further can include at least a first die that is coupled to the first interposer and the second interposer.

Claims (43)

1. An integrated circuit structure comprising:

a first interposer;

a second interposer;

wherein the first interposer and the second interposer are coplanar;

a first die coupled to the first interposer and the second interposer; and

a second die coupled to the first interposer;

wherein the first die is communicatively linked to a substrate through the first interposer and through the second interposer;

wherein the second die is communicatively linked to the substrate only through the first interposer;

wherein the first interposer and the second interposer each is passive and comprises a plurality of through-silicon vias and at least one patterned metal layer forming wires;

wherein the first die is coupled to the first and second interposer using solder bumps; and

wherein the second die is coupled to the first interposer using solder bumps.

2. The integrated circuit structure of claim 1 , wherein the first die and the second die are programmable integrated circuits.

3. The integrated circuit structure of claim 1 , wherein the first die and the second die are field programmable gate arrays.

4. The integrated circuit structure of claim 1 , further comprising:

a third die coupled to the second interposer;

wherein the third die is communicatively linked to the substrate only through the second interposer.

5. The integrated circuit structure of claim 1 , wherein the first interposer and the second interposer are separated by a selected distance forming a channel; and

wherein the first die spans the channel.

6. An integrated circuit structure comprising:

a substrate comprising a surface;

a first interposer comprising a first surface and a second surface;

wherein the first surface of the first interposer is coupled to the surface of the substrate;

a second interposer comprising a first surface and a second surface;

wherein the first surface of the second interposer is coupled to the surface of the substrate;

a third interposer comprising a first surface and a second surface;

wherein the first surface of the third interposer is coupled to the surface of the substrate;

a first die coupled to the second surface of the first interposer and the second surface of the second interposer;

a second die coupled to the second surface of the second interposer and the second surface of the third interposer;

a fourth interposer comprising a first surface and a second surface; and

a third die coupled to the second surface of the third interposer and the second surface of the fourth interposer; and

wherein the first surface of the fourth interposer is coupled to the surface of the substrate; and

wherein each of the first interposer, the second interposer, the third interposer, and the fourth interposer is in a different quadrant of the surface of the substrate; and

wherein the second die is further coupled to the second surface of the first interposer and the second surface of the fourth interposer.

7. The integrated circuit structure of claim 6 , wherein:

the first interposer, the second interposer, and the third interposer are coplanar;

the first interposer and the second interposer are separated by a first selected distance; and

the second interposer and the third interposer are separated by a second selected distance.

8. The integrated circuit structure of claim 6 , wherein the first die spans a separation between the first interposer and the second interposer.

9. The integrated circuit structure of claim 8 , wherein the second die spans:

the separation between the first interposer and the second interposer;

a separation between the second interposer and the third interposer; and

a separation between the third interposer and the fourth interposer.

10. The integrated circuit structure of claim 6 , wherein the third die spans a separation between the third interposer and the fourth interposer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2012
From: BANIJAMALI, BAHAREH
To: XILINX, INC.
Reel/Frame 027674/0397 →
Continuity (1)
Related Publication 20130200511A1 · Aug 8, 2013