IP Library Granted Patent US 9,722,212
Granted Patent B2
US 9,722,212 · App. 13/372,087 · Granted Aug 1, 2017

Lighting device, light-emitting device, and manufacturing method and manufacturing apparatus thereof

Inventor: Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/56H01L27/3246
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Quick Facts
Patent No.
US 9,722,212
App. No.
13/372,087
Granted
Aug 1, 2017
Kind
B2
Abstract

The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced.

Claims (25)

1. A method for manufacturing a light emitting device comprising the steps of:

providing first substrates in a load chamber;

sequentially transferring the first substrates via a transfer chamber from the load chamber to evaporation chambers, wherein the evaporation chambers are connected in series to each other;

forming a layer comprising a light-emitting substance over each of the first substrates in the evaporation chambers;

providing the first substrates in a substrate folder after forming the layer;

forming an electrode over each of the first substrates in the substrate folder by batch processing in a first sputtering chamber;

forming a protective layer over each of the first substrates in the substrate folder by batch processing in a second sputtering chamber after forming the electrode; and

sequentially sealing each of the first substrates with a second substrate provided with an optical member in a sealing chamber,

wherein the step of forming the layer is performed without an evaporation mask in the evaporation chambers, and

wherein the first substrates in the substrate folder are arranged in parallel rows.

2. The method for manufacturing the light emitting device according to claim 1 , wherein the electrode has a light-transmitting property.

3. The method for manufacturing the light emitting device according to claim 1 , wherein a surface of each of the first substrates in the substrate folder is provided perpendicular to a surface of a target in each of the first sputtering chamber and the second sputtering chamber.

4. The method for manufacturing the light emitting device according to claim 1 , further comprising the step of: separating each of the first substrates in a separation chamber after sealing each of the first substrates with the second substrate.

5. The method for manufacturing the light emitting device according to claim 1 , further comprising the steps of:

separating each of the first substrates in a separation chamber after sealing each of the first substrates with the second substrate; and

bonding a flexible base material to a surface separated from the first substrates in a bonding chamber after separating each of the first substrates.

6. The method for manufacturing the light emitting device according to claim 1 , further comprising the steps of:

separating each of the first substrates in a first separation chamber after sealing each of the first substrates with the second substrate;

bonding a first flexible base material to a first surface separated from each of the first substrates in a first bonding chamber;

separating the second substrate in a second separation chamber after bonding the first flexible base material to the first surface; and

bonding a second flexible base material to a second surface separated from the second substrate in a second bonding chamber,

wherein the second surface is opposite to the first surface.

7. The method for manufacturing the light emitting device according to claim 1 , wherein the optical member is a color filter or a microlens array.

8. The method for manufacturing the light emitting device according to claim 1 , wherein each of the first substrates is provided with a transistor.

9. The method for manufacturing the light emitting device according to claim 1 , wherein the layer is formed so as to have a stacked structure of a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 13, 2012
From: YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 027695/0692 →
Priority Claims (1)
JP 2011-028920 · Feb 14, 2011 · national
Continuity (1)
Related Publication 20120208303A1 · Aug 16, 2012