Process for forming silver films on silicon
A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.
1. A process for etching a silicon-containing substrate, comprising the steps of (a) cleaning a surface of the substrate, (b) depositing a film on the cleaned substrate surface, (c) depositing a silver film on the film deposited in step (b), and (d) contacting the silver with an etchant comprising HF, wherein the film deposited in step (b) can be etched by an etchant comprising HF, and wherein the silver film deposited in step (c) is substantially uniform, wherein the etching of step (d) is silver-assisted; wherein the film described in step (b) comprises alumina.
2. The process of claim 1 , wherein the film deposited in (c) is patterned.
3. The process of claim 1 , further comprising step (a′) of depositing nanoparticles atop the cleaned surface of the substrate.
4. The process of claim 1 , further comprising step (a″) of growing or depositing a layer of silicon dioxide atop the cleaned surface of the substrate.
5. The process of claim 1 , wherein the alumina film has a thickness between about 20 nm and about 250 nm.
6. The process of claim 1 , wherein the silver film has a thickness between about 10 nm and about 250 nm.
7. The process of claim 1 , wherein the etchant further comprises an oxidizer.
8. The process of claim 1 , wherein the oxidizer comprises bubbles of oxygen.
9. The process of claim 1 , wherein the etchant is aqueous.
10. The process of claim 3 , wherein the nanoparticles comprise polystyrene.
11. The process of claim 3 , wherein the majority of the nanoparticles have diameters between about 20 nm and about 250 nm.
12. The process of claim 1 , wherein a density of no more than 20 unintended nanowires per μm 2 is obtained as a result of etching.
13. The process of claim 3 , further comprising a step of reducing the diameters of the deposited nanoparticles.
14. The process of claim 3 , wherein the thickness of the silver film deposited in step (c) has a standard deviation of no more than about 25%.