IP Library Granted Patent US 9,190,543
Granted Patent B2
US 9,190,543 · App. 13/376,118 · Granted Nov 17, 2015

Solution-processed inorganic photo-voltaic devices and methods of production

Inventors: Yang Yang (Los Angeles, CA); Wei-Jen Hou (Cerritos, CA); Bao Lei (Los Angeles, CA); Shenghan Li (San Jose, CA)
Assignee: The Regents of the University of California
H01L31/0322C23C18/1204C23C18/1225C23C18/1291H01L31/022425H01L31/03923H01L31/0725H01L31/0749Y02E10/52Y02E10/541
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Quick Facts
Patent No.
US 9,190,543
App. No.
13/376,118
Granted
Nov 17, 2015
Kind
B2
Abstract

Methods of producing photo-voltaic devices include spray coating deposition of metal chalcogenides, contact lithographic methods and/or metal ion injection. Photo-voltaic devices include devices made by the methods, tandem photo-voltaic devices and bulk junction photovoltaic devices.

Claims (14)

1. A method of producing a photo-voltaic device, comprising:

dissolving metal chalcogenides in a solvent to provide a precursor solution having a concentration of chalcogenides in solution of less than about 1 mmole/ml;

heating a substrate to a temperature between 300° C. and 600° C.;

spraying at least a portion of said precursor solution onto a structure comprising said substrate to be annealed to form at least part of an active layer of said photo-voltaic device; and

varying a concentration of copper in said precursor solution to provide a concentration gradient of copper in a vertical direction as said spraying builds up said active layer in said vertical direction so as to provide an average grain size of at least 20 nm,

wherein said concentration of copper in said precursor solution is varied by varying an amount of solvent in said precursor solution.

2. A method of producing a photo-voltaic device according to claim 1 , wherein said concentration of chalcogenides in solution of less than 0.5 mmole/ml and greater than 0.05 mmole/ml.

3. A method of producing a photo-voltaic device according to claim 1 , wherein said solvent comprises hydrazine.

4. A method of producing a photo-voltaic device according to claim 1 , wherein said metal chalcogenides comprise at least one of Cu, In, Ga, Zn, Sn, Na, K, Al and P.

5. A method of producing a photo-voltaic device according to claim 1 , wherein said metal chalcogenides comprise In 2 Se 3 and Cu 2 S.

6. A method of producing a photo-voltaic device according to claim 1 , further comprising:

spraying at least a second portion of said precursor solution onto a composite structure comprising said substrate and said active layer to be annealed to form at least part of a second active layer of said photo-voltaic device to provide a tandem photo-voltaic device comprising at least two electrically connected active layers.

7. A photo-voltaic device produced according to the method of claim 1 .

8. A method of producing a photo-voltaic device according to claim 1 , wherein said heating said substrate is performed simultaneously with said spraying said at least said portion of said precursor solution.

Assignments (2)
CONFIRMATORY LICENSE Recorded Aug 7, 2013
From: UNIVERSITY OF CALIFORNIA LOS ANGELES
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 030984/0700 →
CONFIRMATORY LICENSE Recorded Jun 15, 2012
From: UNIVERSITY OF CALIFORNIA LOS ANGELES
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 028381/0874 →
Continuity (3)
Provisional Application 61239960 · Sep 4, 2009
Provisional Application 61184104 · Jun 4, 2009
Related Publication 20120073622A1 · Mar 29, 2012