Ceramic dielectric material matched with nickel internal electrode and method for producing capacitor using same

1. A high-frequency and low-dielectric-constant ceramic dielectric material comprising:

a main crystalline phase;

a modifying additive; and

a sintering flux,

wherein said main crystalline phase is MgZr x Si (1−x) O 3 with 0.05≦x≦0.15,

wherein said modifying additive is selected from the group consisting of MnO 2 , Al 2 O 3 , CaO, Bi 2 O 3 , and TiO 2 , and

wherein said sintering flux is selected from the group consisting of B 2 O 3 , SiO 2 , ZnO, Li 2 O, K 2 O, and BaO.

2. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 1 ,

wherein said main crystalline phase is in a range of 85-95 mol %,

wherein said modifying additive is in a range of 1.5-13 mol %, and

wherein said sintering flux is in a range of 1.5-13 mol %.

3. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 2 , wherein said modifying additive comprises MnO 2 0.5-3.0 mol %, Al 2 O 3 1.0-3.0 mol %, CaO 0-1.0 mol %, Bi 2 O 3 0-5.0 mol %, and TiO 2 0-1.0 mol %.

4. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 2 , wherein said sintering flux comprises:

B 2 O 3 0.5-3.0 mol %,

SiO 2 0-3.0 mol %,

ZnO 1.0-4.0 mol %,

Li 2 O 0-1.0 mol %,

K 2 O 0-1.0 mol %, and

BaO 0-1.0 mol %.

5. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 1 , wherein said main crystalline phase is obtained by ball-milling and evenly mixing Mg(OH) 2 , SiO 2 , and ZrO 2 to yield a mixture, and then precalcining the mixture at a temperature between 1050° C. and 1200° C.

6. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 2 , wherein said main crystalline phase is obtained by ball-milling and evenly mixing Mg(OH) 2 , SiO 2 , and ZrO 2 to yield a mixture, and then precalcining the mixture at a temperature between 1050° C. and 1200° C.

7. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 1 , wherein the ceramic dielectric material meets requirements of COG characteristics and has a dielectric constant between 8 and 12.

8. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 2 , wherein the ceramic dielectric material meets requirements of COG characteristics and has a dielectric constant between 8 and 12.

9. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 3 , wherein the ceramic dielectric material meets requirements of COG characteristics and has a dielectric constant between 8 and 12.

10. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 4 , wherein the ceramic dielectric material meets requirements of COG characteristics and has a dielectric constant between 8 and 12.

11. The high-frequency and low-dielectric-constant ceramic dielectric material of claim 5 , wherein the ceramic dielectric material meets requirements of COG characteristics and has a dielectric constant between 8 and 12.

12. A method for producing a MLCC made from the high-frequency and low-dielectric-constant ceramic dielectric material of claim 1 , comprising:

preparing a ceramic slurry by the high-frequency and low-dielectric-constant ceramic dielectric material;

fabricating a of ceramic dielectric green sheets from the ceramic slurry;

alternately printing and stacking internal electrodes made from nickel or nickel alloy and dielectric layers to form a briquette;

drying the briquette;

laminating the briquette to a lamination;

dicing the lamination into chips with required configuration;

binder-removing from the chips by heat-treating MLCC chips at 200-300° C. to remove organic binders and solvent;

sintering the chips for 2.5-5 h under reducing atmosphere at a temperature between 1120° C. to 1200° C.;

chamfering the chips;

coating each of two ends of the chips for electrical conductivity to yield external electrodes;

sintering the external electrodes at a temperature between 830° C. to 900° C.; and

electroplating the external electrodes.

13. A method for producing a MLCC made from the high-frequency and low-dielectric-constant ceramic dielectric material of claim 2 , comprising:

preparing a ceramic slurry by the high-frequency and low-dielectric-constant ceramic dielectric material;

fabricating a of ceramic dielectric green sheets from the ceramic slurry;

alternately printing and stacking internal electrodes made from nickel or nickel alloy and dielectric layers to form a briquette;

drying the briquette;

laminating the briquette to a lamination;

dicing the lamination into chips with required configuration;

binder-removing from the chips by heat-treating MLCC chips at 200-300° C. to remove organic binders and solvent;

sintering the chips for 2.5-5 h under reducing atmosphere at a temperature between 1120° C. to 1200° C.;

chamfering the chips;

coating each of two ends of the chips for electrical conductivity to yield external electrodes;

sintering the external electrodes at a temperature between 830° C. to 900° C.; and

electroplating the external electrodes.

14. A method for producing a MLCC made from the high-frequency and low-dielectric-constant ceramic dielectric material of claim 3 , comprising:

preparing a ceramic slurry by the high-frequency and low-dielectric-constant ceramic dielectric material;

fabricating a of ceramic dielectric green sheets from the ceramic slurry;

alternately printing and stacking internal electrodes made from nickel or nickel alloy and dielectric layers to form a briquette;

drying the briquette;

laminating the briquette to a lamination;

dicing the lamination into chips with required configuration;

binder-removing from the chips by heat-treating MLCC chips at 200-300° C. to remove organic binders and solvent;

sintering the chips for 2.5-5 h under reducing atmosphere at a temperature between 1120° C. to 1200° C.;

chamfering the chips;

coating each of two ends of the chips for electrical conductivity to yield external electrodes;

sintering the external electrodes at a temperature between 830° C. to 900° C.; and

electroplating the external electrodes.

15. A method for producing a MLCC made from the high-frequency and low-dielectric-constant ceramic dielectric material of claim 4 , comprising:

preparing a ceramic slurry by the high-frequency and low-dielectric-constant ceramic dielectric material;

fabricating a of ceramic dielectric green sheets from the ceramic slurry;

alternately printing and stacking internal electrodes made from nickel or nickel alloy and dielectric layers to form a briquette;

drying the briquette;

laminating the briquette to a lamination;

dicing the lamination into chips with required configuration;

binder-removing from the chips by heat-treating MLCC chips at 200-300° C. to remove organic binders and solvent;

sintering the chips for 2.5-5 h under reducing atmosphere at a temperature between 1120° C. to 1200° C.;

chamfering the chips;

coating each of two ends of the chips for electrical conductivity to yield external electrodes;

sintering the external electrodes at a temperature between 830° C. to 900° C.; and

electroplating the external electrodes.

16. A method for producing a MLCC made from the high-frequency and low-dielectric-constant ceramic dielectric material of claim 5 , comprising:

preparing a ceramic slurry by the high-frequency and low-dielectric-constant ceramic dielectric material;

fabricating a of ceramic dielectric green sheets from the ceramic slurry;

alternately printing and stacking internal electrodes made from nickel or nickel alloy and dielectric layers to form a briquette;

drying the briquette;

laminating the briquette to a lamination;

dicing the lamination into chips with required configuration;

binder-removing from the chips by heat-treating MLCC chips at 200-300° C. to remove organic binders and solvent;

sintering the chips for 2.5-5 h under reducing atmosphere at a temperature between 1120° C. to 1200° C.;

chamfering the chips;

coating each of two ends of the chips for electrical conductivity to yield external electrodes;

sintering the external electrodes at a temperature between 830° C. to 900° C.; and

electroplating the external electrodes.

17. A method for producing a MLCC made from the high-frequency and low-dielectric-constant ceramic dielectric material of claim 6 , comprising:

preparing a ceramic slurry by the high-frequency and low-dielectric-constant ceramic dielectric material;

fabricating a of ceramic dielectric green sheets from the ceramic slurry;

alternately printing and stacking internal electrodes made from nickel or nickel alloy and dielectric layers to form a briquette;

drying the briquette;

laminating the briquette to a lamination;

dicing the lamination into chips with required configuration;

binder-removing from the chips by heat-treating MLCC chips at 200-300° C. to remove organic binders and solvent;

sintering the chips for 2.5-5 h under reducing atmosphere at a temperature between 1120° C. to 1200° C.;

chamfering the chips;

coating each of two ends of the chips for electrical conductivity to yield external electrodes;

sintering the external electrodes at a temperature between 830° C. to 900° C.; and

electroplating the external electrodes.