Chemical vapor deposition using N,O polydentate ligand complexes of metals

1. A chemical vapor deposition method of forming a doped layer comprised of zinc oxide and at least one metal-containing species selected from the group consisting of Al- and B-containing species on a substrate, comprising contacting a precursor vapor with the substrate to deposit the doped layer thereon, wherein the precursor vapor consists of at least one primary precursor comprising at least one zinc-containing compound, at least one secondary precursor comprising a complex having a structure:

wherein n is 2 or 3, X is OR 3 , Y is NR 4 , M is Al or B, R 1 , R 2 , and R 3 are the same or different, and are methyl or ethyl, and R 4 is H, methyl or ethyl,

optionally at least one oxygen-containing compound that does not contain a metal or fluorine and that is selected from the group consisting of esters, ketones, alcohols, hydrogen peroxide, O 2 and water, and

an inert carrier gas.

2. The method of claim 1 , wherein at least a portion of the precursor vapor is generated by volatilizing a precursor composition comprised of the least one primary precursor and the least one secondary precursor.

3. The method of claim 1 , wherein the at least one primary precursor comprises at least one zinc-containing compound having the general formula R 1 R 2 Zn or R 1 R 2 Zn.[L] n , where R 1 and R 2 are the same or different and are selected from alkyl groups or aryl groups, L is a ligand, n is 1 if L is a polydentate ligand and n is 2 if L is a monodentate ligand.

4. The method of claim 1 , wherein a transparent conductive zinc oxide layer is formed on the substrate.

5. The method of claim 1 , wherein the substrate is a glass substrate.

6. The method of claim 1 , wherein said contacting is carried out at about atmospheric pressure.

7. The method of claim 1 , wherein the substrate is maintained at a temperature of less than 400° C. during the contacting.