Ferroelectric analyzing device and method for adjusting ferroelectric domain switching speed
The present invention relates to a ferroelectric analyzing device and a method for adjusting ferroelectric domain switching speed with the ferroelectric analyzing device, and pertains to the technical field of characteristic test of solid-state dielectrics. The ferroelectric analyzing device comprises a voltage pulse generator for generating square pulse signal, which is biased on a ferroelectric thin film so as to switch the polarization of ferroelectric domains, the ferroelectric analyzing device further comprises a variable resistor which is connected in series with the ferroelectric thin film. The variable resistor is used for adjusting domain switching current so as to realize adjustment of domain switching speed of ferroelectric domains. In the method, the square pulse signal is biased on the ferroelectric thin film, and an adjustment of domain switching speed of ferroelectric domains can be realized by adjusting the resistance value of the variable resistor. The device can adjust the moving speed of ferroelectric domains continuously, and can also adjust the coercive voltage of the ferroelectric thin film; it does not depend on the voltage pulse signal generator, can be easily adjusted continuously, has a wide range of adjustment, and is reliable in data tests.
1. A ferroelectric analyzing device comprising a voltage pulse generator for generating square pulse signal, which is biased on a ferroelectric thin film so as to switch polarization of ferroelectric domains, characterized in that the ferroelectric analyzing device further comprises a variable resistor which is connected in series with the ferroelectric thin film wherein the variable resistor is used for adjusting domain switching current so as to realize adjustment of domain switching speed of ferroelectric domains.
2. The ferroelectric analyzing device according to claim 1 , characterized in that the ferroelectric analyzing device further comprises a signal collecting device for collecting signals across the variable resistor.
3. The ferroelectric analyzing device according to claim 2 , characterized in that the signal collecting device is oscilloscope.
4. The ferroelectric analyzing device according to claim 2 , characterized in that the collected signals comprise the platform amplitude of voltage biased on the variable resistor during domain switching and/or the time of domain switching.
5. The ferroelectric analyzing device according to claim 1 , characterized in that the range of resistance value of the variable resistor is substantially from 1Ω to 10 9 Ω.
6. The ferroelectric analyzing device according to claim 1 , characterized in that the domain switching current is calculated by the following relationship:
I sw =( V−V c ) /R t =( V−V c )/( R 1 +R 2 )
wherein, I sw is the domain switching current, V is the voltage amplitude of the square pulse, V c is the coercive voltage, R t is the overall resistance of circuit, R 2 is the resistance value of the variable resistor, R 1 is the resistor connected in series with R 2 and comprises the internal resistor of the voltage pulse generator.
7. The ferroelectric analyzing device according to claim 6 , characterized in that the required charge for domain switching is calculated by the following relationship:
Q sw =|∫I sw dt|
wherein I sw is the domain switching current, Q sw is the required charge for domain switching.
8. A method for adjusting ferroelectric domain switching speed with the ferroelectric analyzing device according to claim 1 , the method including the steps of:
biasing the square pulse signal on the ferroelectric thin film; and
adjusting the ferroelectric domain switching speed by adjusting the resistance value of the variable resistor.
9. The method for adjusting ferroelectric domain switching speed according to claim 8 , characterized in that before biasing the square pulse signal, realizing a pre-polarization of ferroelectric domain by biasing a presetting pulse signal on the ferroelectric thin film.
10. The method for adjusting ferroelectric domain switching speed according to claim 9 , characterized in that the polarity of the presetting pulse signal is opposite to the polarity of the square pulse signal.
11. The method for adjusting ferroelectric domain switching speed according to claim 8 , including adjusting the coercive voltage of the ferroelectric thin film simultaneously with adjusting the resistance value of the variable resistor.
12. The method for adjusting ferroelectric domain switching speed according to claim 8 , characterized in that the domain switching current is calculated by the following relationship:
I sw =( V−V c ) /R t =( V−V c )/( R 1 +R 2 )
wherein, I sw is the domain switching current, V is the voltage amplitude of the square pulse signal, V c is the coercive voltage, R t is the overall resistance of circuit, R 2 is the resistance value of the variable resistor, R 1 is the resistor connected in series with R 2 and comprising the internal resistor of the voltage pulse generator.
13. The method for adjusting ferroelectric domain switching speed according to claim 12 , characterized in that the required charge for domain switching is calculated by the following relationship:
Q sw =|∫I sw dt|
wherein I sw is the domain switching current, Q sw is the required charge for domain switching.
14. The method for adjusting ferroelectric domain switching speed according to claim 8 , characterized in that the ferroelectric analyzing device further comprises a signal collecting device for collecting signals across the variable resistor; the signals collected by the signal collecting device comprises the platform amplitude of voltage biased on the variable resistor during domain switching and/or the time of domain switching.
15. The method for adjusting ferroelectric domain switching speed according to claim 14 , including calculating the domain switching current I sw by dividing the platform amplitude of voltage across the variable resistor by the resistance value of the variable resistor; further, the coercive voltage of the ferroelectric thin film is calculated by the following relationship:
I sw =( V−V c ) /R t =( V−V c )/( R 1 +R 2 )
wherein I sw is the domain switching current, V is the voltage amplitude of the square pulse signal, and V c is the coercive voltage, R t is the overall resistance of circuit, R 2 is the resistance value of the variable resistor, R 1 is the resistor connected in series with R 2 and comprising the inner resistor of the voltage pulse generator.