Thermoelectric device using semiconductor technology
An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 μm.
1. An integrated circuit in semiconductor technology comprising:
a functional unit comprising at least one power transistor configured to operate in chopped mode and forming an intermittent heat source with a heating period and a cooling period, and
a thermoelectric device provided with a hot side arranged in proximity to the heat source, and a cold side, supplying a signal according to the temperature difference between the hot and cold sides, the hot and cold sides being arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies,
the thermoelectric device having a voltage comprising alternating positive and negative pulses, and
a distance between the hot and cold sides being less than 100 μm.
2. The integrated circuit device according to claim 1 , comprising a measuring circuit providing information concerning the heating condition of the transistor from the positive and negative pulses.
3. The integrated circuit according to claim 1 , wherein the hot side is coupled to the heat source by a thermal bridge made in an interconnection level of the semiconductor technology.
4. The integrated circuit according to claim 1 , wherein the thermoelectric device is made on an insulator.
5. The integrated circuit according to claim 1 made in a technology providing several interconnection levels and requiring a minimum proportion of metal per level, comprising a stepped structure starting from the hot side and moving away from a distance between hot and cold sides going towards the cold side, the steps of the structure being made from metal in successive interconnection levels.
6. The integrated circuit according to claim 5 , wherein the steps are realized with a minimum distance allowing satisfying a minimum metal proportion requirement per level.
7. The integrated circuit according to claim 1 , comprising a thermal bridge connecting the cold side to a strip accessible from outside the integrated circuit.
8. The integrated circuit according to claim 1 , wherein the heat source is a transistor operating in chopped mode.
9. The integrated circuit according to claim 3 , wherein the thermal bridge comprises vias arranged around one end of the device without coming into electric contact with the device.
10. The integrated circuit according to claim 1 , wherein the hot and cold sides being arranged in such a way that the temperature of the hot side is greater than that of the cold side at the end of the heating period and the temperature of the cold side is greater than that of the hot side at the end of the cooling period.
11. An integrated circuit in semiconductor technology comprising:
a functional unit comprising at least one power transistor configured to operate in chopped mode and forming an intermittent heat source with a heating period and a cooling period; and
a thermoelectric device provided with a hot side arranged in proximity to the heat source, and a cold side, supplying a signal according to a temperature difference between the hot and cold sides, the hot and cold sides being arranged in such a way that their temperatures tend to equilibrate when the temperature of the heat source varies, wherein
the hot side is coupled to the heat source by a thermal bridge made in an interconnection level of the semiconductor technology; and
the thermal bridge comprises vias arranged around one end of the device without coming into electric contact with the device.