Controlled-Pressure Process for Production of CZTS Thin-Films
In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate and then annealing the precursor layer in the presence of a gaseous phase comprising Sn(S, Se), where the partial pressure of each component of the gaseous phase is kept approximately constant over substantially all of the surface of the precursor layer.
1 . A method comprising:
depositing a precursor layer onto a substrate, the precursor layer comprising Cu, Zn, Sn, and one or more of S or Se; and
annealing the precursor layer in the presence of a gaseous phase comprising Sn and one or more of S or Se, the partial pressure of each component of the gaseous phase being approximately constant over substantially all of the surface of the precursor layer.
2 . The method of claim 1 , wherein the annealing is performed in a constrained volume.
3 . The method of claim 1 , wherein the partial pressure of each component of the gaseous phase is kept approximately constant over substantially all of the surface of the precursor layer by controlling the inlet and outlet gas flow rates.
4 . The method of claim 1 , wherein the partial pressure of each component of the gaseous phase is kept approximately constant over substantially all of the surface of the precursor layer for substantially all of the duration of the annealing.
5 . The method of claim 1 , wherein the gaseous phase comprises gaseous SnS, gaseous SnSe, gaseous sulfur, gaseous selenium, or any combination thereof.
6 . The method of claim 5 , wherein the gaseous SnS is at a partial pressure of approximately 0 atm to approximately 1 atm.
7 . The method of claim 5 , wherein the gaseous SnSe is at a partial pressure of approximately 0 atm to approximately 1 atm.
8 . The method of claim 5 , wherein the gaseous sulfur is at a partial pressure of approximately 0 atm to approximately 1 atm.
9 . The method of claim 5 , wherein the gaseous sulfur is S 2 gas, S 8 gas, or any combination thereof.
10 . The method of claim 1 , wherein the gaseous phase further comprises a carrier gas.
11 . The method of claim 10 , wherein the carrier gas is N 2 .
12 . The method of claim 10 , wherein the carrier gas is at a partial pressure of approximately 0 atm to approximately 1 atm.
13 . The method of claim 1 , wherein annealing comprises heating the precursor layer to a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, holding the precursor layer at the first temperature for approximately 5 minutes to approximately 120 minutes, and then cooling the precursor layer to a second temperature of approximately 20 degrees Celsius to approximately 100 degrees Celsius.
14 . A method comprising:
depositing a precursor layer onto a substrate, the precursor layer comprising Cu, Zn, and Sn;
depositing one or more of S or Se onto the precursor layer;
annealing the precursor layer in the presence of a gaseous phase comprising Sn and one or more of S or Se, the partial pressure of each component of the gaseous phase being approximately constant over substantially all of the surface of the precursor layer.
15 . The method of claim 14 , wherein depositing one or more of S or Se onto the precursor layer occurs during annealing.
16 . The method of claim 14 , wherein one or more of S or Se is deposited from the gaseous phase onto the precursor layer during annealing.
17 . A system comprising:
means for depositing a precursor layer onto a substrate, the precursor layer comprising Cu, Zn, Sn, and one or more of S or Se; and
means for annealing the precursor layer in the presence of a gaseous phase comprising Sn and one or more of S or Se, the partial pressure of each component of the gaseous phase being approximately constant over substantially all of the surface of the precursor layer.