Apparatus and method for manufacturing compound semiconductor, and compound semiconductor manufactured thereby
Provided is an apparatus for manufacturing a compound semiconductor by use of metal organic chemical vapor deposition including: a reaction container; a holder on which a formed body is to be placed so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed faces upward, the holder being arranged in the reaction container; and a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside, wherein the holder includes a support member supporting the formed body so that an undersurface of the formed body and a top surface of the holder on which the formed body is to be placed keep a predetermined distance.
1. An apparatus for manufacturing a compound semiconductor by use of metal organic chemical vapor deposition comprising:
a reaction container;
a holder on which a formed body is to be placed so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed faces upward, the holder being arranged in the reaction container; and
a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside, wherein
the holder includes a support member supporting the formed body so that an undersurface of the formed body and a top surface of the holder on which the formed body is to be placed keep a predetermined distance,
wherein the support member is a separately formed member of the holder inserted into at least three locations of a circumferential edge of the holder on which the formed body is to be placed,
wherein the support member of the holder includes:
a support surface for supporting an outer circumferential edge of the undersurface of the formed body; and
an inclined surface configured to form a predetermined angle with respect to the support surface, and
wherein the height of the inclined surface relative to a groove formed in the top surface of the holder gradually increases from the support surface in the direction of an outer circumferential edge of the holder.
2. The apparatus according to claim 1 , wherein the support member of the holder is mounted in the form of a ring on a circumferential edge of the holder on which the formed body is to be placed.
3. The apparatus according to claim 1 , wherein the support surface of the support member has such a predetermined height that the top surface of the holder on which the formed body is placed does not come into contact with the undersurface of the formed body supported by the support surface.
4. The apparatus according to claim 1 , wherein the support member of the holder is made of a material having a coefficient of thermal conductivity of 10W/(m·K) or less.
5. The apparatus according to claim 4 , wherein the support member of the holder is made of one selected from the group consisting of alumina (Al 2 O 3 ), silicon nitride (Si 3 N 4 ), silica glass (SiO 2 ) and zirconia (ZrO 2 ).
6. The apparatus according to claim 1 , wherein the compound semiconductor is a group III nitride semiconductor.
7. The apparatus according to claim 1 , wherein the support member is configured to provide line contact between the formed body and the inclined surface.
8. The apparatus according to claim 1 , wherein the compound semiconductor is a group III nitride semiconductor manufactured by metal organic chemical vapor deposition.
9. The apparatus according to claim 1 , wherein the predetermined distance is in a range of from 50 μm to 500 μm.