Semiconductor light-emitting device
The present disclosure relates to a semiconductor light-emitting device, which includes: a first semiconductor layer having first conductivity; a second semiconductor layer having second conductivity different from the first conductivity; an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a first pad electrode electrically connected to the second semiconductor layer; a high-resistance body partially disposed on the second semiconductor layer; and a branch electrode disposed on the second semiconductor layer, partially extending over the high-resistance body, and electrically connected to the first pad electrode.
1. A semiconductor light-emitting device, comprising:
a first semiconductor layer having first conductivity;
a second semiconductor layer having second conductivity different from the first conductivity;
an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes;
a first pad electrode electrically connected to the second semiconductor layer;
a branch electrode which extends from the first pad electrode;
a light-transmitting conductive film which is formed under the branch electrode, wherein the branch electrode is disposed on the light-transmitting conductive film in a manner that the branch electrode is not disposed between the first pad electrode and the light-transmitting conductive film;
an insulating body disposed between the branch electrode and the second semiconductor layer, wherein the branch electrode extends from the first pad electrode over the insulating body and wherein the branch electrode partially covers the insulating body; and
wherein in a plan view the insulating body is arranged as plurality of islands along a length of the branch electrode outwardly and a thickness of the insulating body ranging from 3000 Å to 20000 Å.
2. The semiconductor light-emitting device as claimed in claim 1 , wherein the branch electrode extends to be alternately disposed on the light-transmitting conductive film and the insulating body.
3. The semiconductor light-emitting device as claimed in claim 2 , wherein a width of the insulating body is equal to or larger than a width of the branch electrode.
4. The semiconductor light-emitting device as claimed in claim 2 , wherein the insulating body is made of at least one selected from the group consisting of SiO 2 , SiN, AlO x , SiON, and TiO 2 .
5. The semiconductor light-emitting device as claimed in claim 1 , further comprising:
a second pad electrode which is disposed on the first semiconductor layer exposed by mesa-etching the second semiconductor layer and the active layer.