Semiconductor device with composite drift region
View Patent ↗A device includes a semiconductor substrate, a channel region in the semiconductor substrate having a first conductivity type, and a composite drift region in the semiconductor substrate, having a second conductivity type. The composite drift region includes a first drift region and a second drift region spaced from the channel region by the first drift region. The device further includes a drain region in the semiconductor substrate, spaced from the channel region by the composite drain region, and having the second conductivity type. The first drift region has a dopant concentration profile with a first concentration level where adjacent the channel region and a second concentration level where adjacent the second drift region, the first concentration level being higher than the second concentration level. In some embodiments, the first and second drift regions are stacked vertically, with the first drift region being shallower than the second drift region.
1. A device comprising:
a semiconductor substrate;
a body region in the semiconductor substrate having a first conductivity type and a channel region;
a composite drift region in the semiconductor substrate, having a second conductivity type, and comprising a first well and a second well spaced from the channel region by the first well; and
a drain region in the semiconductor substrate, spaced from the channel region by the composite drift region, and having the second conductivity type;
wherein the first well has a dopant concentration profile with a first concentration level at a surface of the semiconductor substrate where the first well is adjacent the channel region and a second concentration level where the first well is adjacent the second well, the first concentration level being higher than the second concentration level; and
wherein the first and second wells are connected with one another where the first well has the second concentration level, and not connected with one another where the first well has the first concentration level.
2. The device of claim 1 , wherein the first well is spaced from the drain region by the second well.
3. The device of claim 1 , wherein the first well has a bottom shallower than a bottom of the second well.
4. The device of claim 1 , wherein the second concentration level is at a bottom of the first well at which the first and second wells are connected to one another.
5. The device of claim 1 , further comprising an isolation region in the semiconductor substrate around which charge carriers drift through the first and second wells, and wherein the first and second wells are connected to one another under the isolation region.
6. The device of claim 1 , wherein the dopant concentration profile decreases with increasing depth of the first well.
7. The device of claim 1 , wherein the second concentration level and a dopant concentration level of a layer of the semiconductor substrate in which the composite drift region is disposed have a common order of magnitude.
8. The device of claim 1 , wherein the second well has a dopant concentration level higher than the second concentration level.
9. The device of claim 1 , wherein the first concentration level is more than one order of magnitude higher than the second concentration level.
10. The device of claim 1 , further comprising an isolation region in the semiconductor substrate around which charge carriers drift through the first and second wells, and wherein the second well is a buried region under the isolation region.
11. The device of claim 10 , wherein the first well has a bottom deeper than the isolation region.
12. The device of claim 1 , wherein the dopant concentration profile of the first well has a delta-like shape.
13. The device of claim 1 , wherein the second well has a dopant concentration level lower than the first concentration level and higher than the second concentration level.
14. An electronic apparatus comprising:
a substrate; and
a transistor disposed in the substrate, the transistor comprising:
a first semiconductor region having a first conductivity type;
second and third semiconductor regions having a second conductivity type, disposed above the first semiconductor region, and between which a voltage is applied during operation;
a fourth semiconductor region having the first conductivity type, disposed between the second and third semiconductor regions, and having a conduction region through which charge carriers flow between the second and third semiconductor regions during operation; and
first and second wells having the second conductivity type and in which the charge carriers drift between the third and fourth semiconductor regions under the applied voltage, the second well being spaced from the third semiconductor region by the first well;
wherein the first well has a dopant concentration profile with a first concentration level at a surface of the substrate where the first well is adjacent the conduction region of the fourth semiconductor region and a second concentration level where the first well is adjacent the second well, the first concentration level being higher than the second concentration level; and
wherein the first and second wells are connected with one another where the first well has the second concentration level, and not connected with one another where the first well has the first concentration level.
15. The electronic apparatus of claim 14 , wherein the first well has a bottom shallower than a bottom of the second well.
16. The electronic apparatus of claim 14 , wherein the second concentration level is at a bottom of the first well at which the first and second wells are connected to one another.
17. The electronic apparatus of claim 14 , further comprising an isolation region around which charge carriers drift through the first and second wells, and wherein the first and second wells are connected to one another under the isolation region.
18. The electronic apparatus of claim 14 , wherein the dopant concentration profile decreases with increasing depth of the first well.