Method of manufacturing semiconductor device
In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
1. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming an oxide film;
forming an oxide semiconductor film on the oxide film;
performing a first heat treatment on the oxide semiconductor film;
forming a conductive film over the oxide semiconductor film after performing the first heat treatment;
forming an aluminum oxide film over the oxide semiconductor film and the conductive film;
after forming the oxide semiconductor film, adding oxygen into the oxide semiconductor film; and
performing a second heat treatment on the oxide semiconductor film and the aluminum oxide film after adding the oxygen,
wherein the oxide film and the oxide semiconductor film are successively formed without exposure to air.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the oxide film is a silicon oxide film.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises indium, gallium, and zinc.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein the second heat treatment is performed at a temperature of higher than or equal to 350° C. and lower than or equal to 650° C.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises a crystalline region.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the conductive film is a source electrode.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein the aluminum oxide film is in contact with part of the oxide semiconductor film.
8. The method for manufacturing a semiconductor device according to claim 1 , wherein the first heat treatment is performed at a temperature of higher than or equal to 250° C. and lower than or equal to 700° C.
9. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the first heat treatment is performed in a first atmosphere comprising an inert gas, and
wherein the first atmosphere is changed into a second atmosphere comprising oxygen during the first heat treatment.
10. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxygen is added into the oxide semiconductor film so that a region of the oxide semiconductor film comprises more oxygen than a stoichiometric composition.
11. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxygen is added into the oxide semiconductor film by an oxygen doping treatment.
12. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming an oxide film;
forming an oxide semiconductor film on the oxide film;
forming an aluminum oxide film over the oxide semiconductor film so that the aluminum oxide film is in contact with part of the oxide semiconductor film;
after forming the oxide semiconductor film, adding oxygen into the oxide semiconductor film so that a region of the oxide semiconductor film comprises more oxygen than a stoichiometric composition; and
performing a heat treatment on the oxide semiconductor film and the aluminum oxide film after adding the oxygen.
13. The method of manufacturing a semiconductor device according to claim 12 , wherein the oxide film is a silicon oxide film.
14. The method of manufacturing a semiconductor device according to claim 12 , wherein the oxide semiconductor film comprises indium, gallium, and zinc.
15. The method of manufacturing a semiconductor device according to claim 12 , wherein the heat treatment is performed at a temperature of higher than or equal to 350° C. and lower than or equal to 650° C.
16. The method of manufacturing a semiconductor device according to claim 12 , wherein the oxide film and the oxide semiconductor film are successively formed without exposure to air.
17. The method of manufacturing a semiconductor device according to claim 12 , wherein a peak of a concentration of oxygen in the oxide semiconductor film into which the oxygen is added is higher than or equal to 1×10 18 /cm 3 and lower than or equal to 3×10 21 /cm 3 .
18. The method of manufacturing a semiconductor device according to claim 12 , wherein the oxide semiconductor film comprises a crystalline region.
19. The method for manufacturing a semiconductor device according to claim 12 , wherein the oxygen is added into the oxide semiconductor film by an oxygen doping treatment.
20. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming an oxide film;
forming an oxide semiconductor film on the oxide film;
performing a first heat treatment on the oxide semiconductor film to remove a hydrogen atom from the oxide semiconductor film;
forming an aluminum oxide film over the oxide semiconductor film after performing the first heat treatment so that the aluminum oxide film is in contact with part of the oxide semiconductor film;
adding oxygen into the oxide semiconductor film after performing the first heat treatment so that a region of the oxide semiconductor film comprises more oxygen than a stoichiometric composition; and
performing a second heat treatment on the oxide semiconductor film and the aluminum oxide film after adding the oxygen.
21. The method of manufacturing a semiconductor device according to claim 20 , wherein the oxide film is a silicon oxide film.
22. The method of manufacturing a semiconductor device according to claim 20 , wherein the oxide semiconductor film comprises indium, gallium, and zinc.
23. The method of manufacturing a semiconductor device according to claim 20 , wherein the first heat treatment is performed at a temperature of higher than or equal to 250° C. and lower than or equal to 700° C.
24. The method of manufacturing a semiconductor device according to claim 20 , wherein the second heat treatment is performed at a temperature of higher than or equal to 350° C. and lower than or equal to 650° C.
25. The method of manufacturing a semiconductor device according to claim 20 , wherein the oxide film and the oxide semiconductor film are successively formed without exposure to air.
26. The method of manufacturing a semiconductor device according to claim 20 , wherein a peak of a concentration of oxygen in the oxide semiconductor film into which the oxygen is added is higher than or equal to 1×10 18 /cm 3 and lower than or equal to 3×10 21 /cm 3 .
27. The method of manufacturing a semiconductor device according to claim 20 , wherein the oxide semiconductor film comprises a crystalline region.
28. The method for manufacturing a semiconductor device according to claim 20 , wherein the oxygen is added into the oxide semiconductor film by an oxygen doping treatment.