Through silicon via structure, method of formation, and integration in semiconductor substrate
Various implementations of through silicon vias with pinched off regions are disclosed. A semiconductor substrate includes a plurality of the through silicon vias disposed in the substrate and extending from a top surface of the substrate to a bottom surface of the substrate. A conductive filler is disposed within each of the plurality of through silicon vias, each of the plurality of through silicon vias having a hollow center which reduces thermal stress in the semiconductor substrate. The plurality of through silicon vias also have pinched off regions at the bottom and/or the top portions of the through silicon vias, which prevent contamination during processing of the semiconductor substrate.
1. A semiconductor substrate having a plurality of devices, said semiconductor substrate comprising:
a plurality of through silicon vias disposed in said substrate extending from a top surface of said substrate to a bottom surface of said substrate;
a conductive filler disposed within each of said plurality of through silicon vias, each of said plurality of through silicon vias having a hollow center to reduce thermal stress in said semiconductor substrate, said hollow center being entirely surrounded by said conductive filler to provide space for said conductive filler to expand inward;
wherein each of said plurality of through silicon vias has a pinched off region at a bottom portion to prevent contamination during processing of said semiconductor substrate, and wherein said hollow center is tapered in said pinched off region.
2. The semiconductor substrate of claim 1 , wherein said pinched off region is formed by tapering a bottom portion of each of said plurality of through silicon vias.
3. The semiconductor substrate of claim 1 , wherein said preventing contamination during said processing is achieved by preventing contamination during polishing said bottom surface of said substrate.
4. The semiconductor substrate of claim 1 , wherein said conductive filler comprises a metallic filler.
5. The semiconductor substrate of claim 1 , wherein said conductive filler comprises tungsten.
6. The semiconductor substrate of claim 1 , wherein each of said plurality of through silicon vias is tapered at a bottom portion such that said conductive filler fills said bottom portion, pinching off said hollow center.
7. The semiconductor substrate of claim 1 , wherein a first group of said plurality of through silicon vias are laid out in a width direction and a second group of said plurality of through silicon vias are laid out in a length direction.
8. The semiconductor substrate of claim 1 , wherein each of said plurality of through silicon vias has at least one chamfered corner.
9. The semiconductor substrate of claim 1 , further comprising a pinched off region at a top of each of said plurality of through silicon vias.
10. The semiconductor substrate of claim 1 , wherein each of said plurality of through silicon vias is tapered at a bottom portion such that said conductive filler incompletely fills said bottom portion, narrowing said hollow center.
11. A semiconductor substrate having a plurality of devices, said semiconductor substrate comprising:
a plurality of through silicon vias disposed in said substrate extending from a top surface of said substrate to a bottom surface of said substrate;
a conductive filler disposed within each of said plurality of through silicon vias, each of said plurality of through silicon vias having a hollow center being entirely surrounded by said conductive filler to provide space for said conductive filler to expand inward for reducing thermal stress in said semiconductor substrate;
wherein each of said plurality of through silicon vias has a pinched off region at a top portion and another pinched off region at a bottom portion to prevent contamination during processing of said semiconductor substrate, and wherein said hollow center is tapered in said another pinched off region.
12. The semiconductor substrate of claim 11 , further comprising a dielectric layer disposed on said top surface of said substrate, wherein said dielectric layer has a plurality of openings, each situated over one of said plurality of through silicon vias, and having a width smaller than a width of said through silicon vias.
13. The semiconductor substrate of claim 11 , wherein said conductive filler comprises a metallic filler.
14. The semiconductor substrate of claim 11 , wherein said conductive filler comprises tungsten.
15. The semiconductor substrate of claim 11 , wherein a first group of said plurality of through silicon vias are laid out in a width direction and a second group of said plurality of through silicon vias are laid out in a length direction.
16. The semiconductor substrate of claim 11 , wherein each of said plurality of through silicon vias has at least one chamfered corner.
17. The semiconductor substrate of claim 11 , wherein said another pinched off region is tapered at said bottom of each of said plurality of through silicon vias.
18. The semiconductor substrate of claim 11 , wherein each of said plurality of through silicon vias is tapered at a bottom portion such that said conductive filler incompletely fills said bottom portion, narrowing said hollow center.