Thin-film heterostructure thermoelectrics in a group IIA and IV-VI materials system
Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.
1. A thin-film thermoelectric material comprising:
a heterostructure formed in a Group IIa and IV-VI materials system, the heterostructure comprising a plurality of barrier layers separated by a plurality of well layers such that the plurality of barrier layers and the plurality of well layers form an alternating series of barrier and well layers;
wherein:
each well layer of the plurality of well layers comprises one or more layers of a first material in the Group IIa and IV-VI materials system, and each barrier layer of the plurality of barrier layers comprises one or more layers of a second material in the Group IIa and IV-VI materials system having a bandgap that is greater than that of the first material in the Group IIa and IV-VI materials system of all adjacent well layers in the heterostructure; and
the first material in the Group IIa and IV-VI materials system of each of the plurality of well layers is a first Lead Strontium Tin Selenide material, and the second material in the Group IIa and IV-VI materials system of each of the plurality of barrier layers is a second Lead Strontium Tin Selenide material having a bandgap that is greater than that of the first Lead Strontium Tin Selenide material of all adjacent well layers in the heterostructure.
2. The thin-film thermoelectric material of claim 1 wherein all barrier layers of the plurality of barrier layers comprise one or more layers of the same Lead Strontium Tin Selenide material.
3. The thin-film thermoelectric material of claim 1 wherein at least two barrier layers of the plurality of barrier layers comprise different Lead Strontium Tin Selenide materials.
4. The thin-film thermoelectric material of claim 1 wherein all well layers of the plurality of well layers comprise one or more layers of the same Lead Strontium Tin Selenide material.
5. The thin-film thermoelectric material of claim 1 wherein at least two well layers of the plurality of well layers comprise different Lead Strontium Tin Selenide materials.
6. A thin-film thermoelectric material comprising:
a heterostructure formed in a Group IIa and IV-VI materials system, the heterostructure comprising a plurality of barrier layers separated by a plurality of well layers such that the plurality of barrier layers and the plurality of well layers form an alternating series of barrier and well layers;
wherein:
at least one barrier layer of the plurality of barrier layers comprises a short period superlattice formed in the Group IIa and IV-VI materials system, the short period superlattice comprising a plurality of superlattice barrier layers separated by a plurality of superlattice well layers such that the plurality of superlattice barrier layers and the plurality of superlattice well layers form an alternating series of superlattice barrier and superlattice well layers;
each superlattice well layer of the plurality of superlattice well layers comprises one or more layers of a first material in the Group IIa and IV-VI materials system, and each superlattice barrier layer of the plurality of superlattice barrier layers comprises one or more layers of a second material in the Group IIa and IV-VI materials system having a bandgap that is greater than a bandgap of the first material in the Group IIa and IV-VI materials system of all adjacent superlattice well layers in the short period superlattice; and
for each superlattice well layer of the plurality of superlattice well layers the first material in the Group IIa and IV-VI materials system is a first Lead Strontium Tin Selenide material, and for each superlattice barrier layer of the plurality of superlattice barrier layers the second material in the Group IIa and IV-VI materials system is a second Lead Strontium Tin Selenide material having a bandgap that is greater than a bandgap of the first Lead Strontium Tin Selenide material of all adjacent superlattice well layers in the short period superlattice.
7. The thin-film thermoelectric material of claim 6 wherein all superlattice barrier layers of the plurality of superlattice barrier layers comprise one or more layers of the same Lead Strontium Tin Selenide material.
8. The thin-film thermoelectric material of claim 6 wherein at least two superlattice barrier layers of the plurality of superlattice barrier layers comprise different Lead Strontium Tin Selenide materials.
9. The thin-film thermoelectric material of claim 6 wherein all superlattice well layers of the plurality of superlattice well layers comprise one or more layers of the same Lead Strontium Tin Selenide material.
10. The thin-film thermoelectric material of claim 6 wherein at least two superlattice well layers of the plurality of superlattice well layers comprise different Lead Strontium Tin Selenide materials.
11. A thin-film thermoelectric material comprising:
a heterostructure formed in a Group IIa and IV-VI materials system, the heterostructure comprising a plurality of barrier layers separated by a plurality of well layers such that the plurality of barrier layers and the plurality of well layers form an alternating series of barrier and well layers;
wherein:
at least one well layer of the plurality of well layers comprises a short period superlattice formed in the Group IIa and IV-VI materials system, the short period superlattice comprising a plurality of superlattice barrier layers separated by a plurality of superlattice well layers such that the plurality of superlattice barrier layers and the plurality of superlattice well layers form an alternating series of superlattice barrier and superlattice well layers;
each superlattice well layer of the plurality of superlattice well layers comprises one or more layers of a first material in the Group IIa and IV-VI materials system, and each superlattice barrier layer of the plurality of superlattice barrier layers comprises one or more layers of a second material in the Group IIa and IV-VI materials system having a bandgap that is greater than a bandgap of the first material in the Group IIa and IV-VI materials system of all adjacent superlattice well layers in the short period superlattice; and
for each superlattice well layer of the plurality of superlattice well layers the first material in the Group IIa and IV-VI materials system is a first Lead Strontium Tin Selenide material, and for each superlattice barrier layer of the plurality of superlattice barrier layers the second material in the Group IIa and IV-VI materials system is a second Lead Strontium Tin Selenide material.
12. The thin-film thermoelectric material of claim 11 wherein all superlattice barrier layers of the plurality of superlattice barrier layers comprise one or more layers of the same Lead Strontium Tin Selenide material.
13. The thin-film thermoelectric material of claim 11 wherein at least two superlattice barrier layers of the plurality of superlattice barrier layers comprise different Lead Strontium Tin Selenide materials.
14. The thin-film thermoelectric material of claim 11 wherein all superlattice well layers of the plurality of superlattice well layers comprise one or more layers of the same Lead Strontium Tin Selenide material.
15. The thin-film thermoelectric material of claim 11 wherein at least two superlattice well layers of the plurality of superlattice well layers comprise different Lead Strontium Tin Selenide materials.