BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS
Provided is a bottom gate type thin film transistor including on a substrate ( 1 ) a gate electrode ( 2 ), a first insulating film ( 3 ) as a gate insulating film, an oxide semiconductor layer ( 4 ) as a channel layer, a second insulating film ( 5 ) as a protective layer, a source electrode ( 6 ), and a drain electrode ( 7 ), in which the oxide semiconductor layer ( 4 ) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film ( 5 ) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer ( 4 ) and contains therein 3.8×10 19 molecules/cm 3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
1 - 9 . (canceled)
10 . A thin film transistor, comprising on a substrate:
a gate electrode;
a first insulating film as a gate insulating film;
an oxide semiconductor layer as a channel layer;
a second insulating film as a protective layer;
a source electrode; and
a drain electrode,
wherein the oxide semiconductor layer comprises at least one of a Sn—In—Zn oxide, an In—Zn—Ga oxide, an In—Sn oxide, an In—Ga oxide, an In—Zn oxide, and an In oxide, and
wherein the second insulating film is formed so as to contain therein 3.8×10 19 molecules/cm 3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.
11 . The thin film transistor according to claim 10 , wherein the at least one of the Sn—In—Zn oxide, the In—Zn—Ga oxide, the In—Sn oxide, the In—Ga oxide, the In—Zn oxide, and the In oxide is an amorphous oxide.
12 . The thin film transistor according to claim 10 , wherein the oxide semiconductor layer comprises an amorphous oxide including In, Zn, and Ga.
13 . The thin film transistor according to claim 10 , wherein the desorbed gas is observed as oxygen by temperature programmed desorption mass spectrometry in the case where the temperature of the surface of the substrate is heated from 50° C. to 800° C.
14 . The thin film transistor according to claim 10 , wherein the second insulating film is formed using an oxide including at least one of Si and Al as a sputtering target, and a sputtering gas with an oxygen concentration of 10 vol % or more and 50 vol % or less.
15 . An apparatus, comprising:
an electro-optical device having a pixel electrode; and
the thin film transistor according to claim 10 ,
wherein the pixel electrode is connected to one of the source electrode and the drain electrode of the thin film transistor.
16 . The apparatus according to claim 15 , wherein the electro-optical device is an electroluminescence device.
17 . The apparatus according to claim 15 , wherein the electro-optical device is a liquid crystal cell.
18 . The apparatus according to claim 15 , wherein a plurality of the electro-optical devices and a plurality of the thin film transistors are arranged two-dimensionally on a substrate.