Light emitting diode package structure
View Patent ↗The invention provides a light emitting diode package structure, including: a light emitting diode chip formed on a substrate; a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm; a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material.
1. A light emitting diode package structure, comprising:
a substrate;
a light emitting diode chip formed on the substrate;
a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm;
a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and
an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material.
2. The light emitting diode package structure as claimed in claim 1 , further comprising:
a lead frame formed on the substrate.
3. The light emitting diode package structure as claimed in claim 2 , further comprising:
at least one wire electrically connected to the light emitting diode chip and the lead frame.
4. The light emitting diode package structure as claimed in claim 1 , wherein the light emitting diode chip emits a light at the wavelength of 400-500 nm, and the wavelength transformation material emits a light at the wavelength of 500-800 nm.
5. The light emitting diode package structure as claimed in claim 1 , wherein the composite coating layer has a reflectivity greater than 90% at the wavelength of 400-500 nm.
6. The light emitting diode package structure as claimed in claim 1 , wherein a portion of the composite coating layer further formed on the sidewall of the light emitting diode chip.
7. The light emitting diode package structure as claimed in claim 1 , wherein the first coating layer and the second coating layer are individually formed of different material.
8. The light emitting diode package structure as claimed in claim 1 , wherein the first coating layer and the second coating layer individually have different reflective index.
9. The light emitting diode package structure as claimed in claim 1 , wherein first coating layer and the second coating layer independently comprise TiO 2 , SiO 2 , Ta 2 O 5 , HfO 2 , ZrO 2 , WO 3 , Nb 2 O 5 , Al 2 O 3 , MgO, Nd 2 O 3 or ZnO.
10. The light emitting diode package structure as claimed in claim 1 , wherein the composite coating layer further comprises a third coating layer and a fourth coating layer, wherein the fist coating layer and the third coating layer are formed of the same material, and the second coating layer and the fourth coating layer are formed of the same material.
11. The light emitting diode package structure as claimed in claim 1 , wherein the composite coating layer is formed by a chemical vapor deposition (CVD), spin-on processing or sputter method.
12. The light emitting diode package structure as claimed in claim 1 , further comprising a bottom reflective layer forming on a bottom of the light emitting diode chip.
13. The light emitting diode package structure as claimed in claim 12 , wherein the bottom reflective layer comprises silver (Ag), nickel (Ni), alumina (Al), tungsten (W), titanium (Ti), platinum (Pt) or combinations thereof.
14. The light emitting diode package structure as claimed in claim 1 , wherein the wavelength transformation material comprises a phosphor powder, quantum dot or organic emitting material.