Semiconductor device, method of manufacturing semiconductor device and system of processing substrate
View Patent ↗Disclosed is a semiconductor device that comprises a gate insulating film formed on a semiconductor substrate; a first conductive metal-containing film formed on the gate insulating film; a second conductive metal-containing film, formed on the first metal-containing film, to which aluminum is added; and a silicon film formed on the second metal-containing film.
1. A method of manufacturing a semiconductor device, comprising:
forming a gate insulating film on a semiconductor substrate;
forming a first conductive metal-containing film directly on the gate insulating film;
forming a second conductive metal-containing film, to which aluminum is added, on the first metal-containing film; and
forming a silicon film directly on the second metal-containing film.
2. The method according to claim 1 , wherein the second metal-containing film is a conductive metal-containing film in which aluminum is added to the first metal-containing film.
3. The method according to claim 1 , wherein the gate insulating film includes a high dielectric constant insulating film.
4. The method according to claim 1 , wherein the gate insulating film includes a silicon-based insulating film, and a high dielectric constant insulating film formed on the silicon-based insulating film.
5. The method according to claim 1 , wherein the second metal-containing film includes a TiAlN film.
6. The method according to claim 1 , wherein the first metal-containing film includes a TiN film, and the second metal-containing film includes a TiAlN film.
7. The method according to claim 1 , further comprising performing activation annealing after the forming of the silicon film.
8. The method according to claim 1 , wherein a thickness of the second conductive metal-containing film is from 3 to 20 nm.
9. The method according to claim 1 , wherein a thickness of the second conductive metal-containing film is from 3 to 10 nm.
10. The method according to claim 1 , wherein a thickness of the second conductive metal-containing film is from 5 to 20 nm.
11. The method according to claim 1 , wherein a thickness of the second conductive metal-containing film is from 5 to 10 nm.
12. The method according to claim 1 , wherein a concentration of aluminum contained in the second conductive metal-containing film is from 10 to 20%.
13. The method according to claim 1 , wherein the second conductive metal-containing film is separated from the gate insulating film by a distance of 2nm or more.
14. The method according to claim 1 , wherein the second conductive metal-containing film serves as a diffusion barrier film that prevents silicon from being diffused from the silicon film into an interface between the first metal-containing film and the gate insulating film.
15. The method according to claim 4 , wherein the second conductive metal-containing film serves as a diffusion barrier film that prevents silicon from being diffused from the silicon film into an interface between the first metal-containing film and the high dielectric constant insulating film.
16. A method of manufacturing a semiconductor device, comprising:
forming a gate insulating film on a semiconductor substrate;
forming a conductive metal-containing film directly on the gate insulating film; and
forming a silicon film directly on the metal-containing film,
wherein in the forming of the metal-containing film, a diffusion barrier film that prevents silicon from being diffused from the silicon film into an interface between the metal-containing film and the gate insulating film is formed in the metal-containing film.
17. A method of manufacturing a semiconductor device, comprising:
forming a gate insulating film on a semiconductor substrate;
forming a first conductive metal-containing film directly on the gate insulating film;
forming a second conductive metal-containing film to which aluminum is added,. directly on the first metal-containing film;
forming a third conductive metal-containing film directly on the second conductive metal-containing film; and
forming a silicon film directly on the third metal-containing film.
18. The method according to claim 17 , wherein the second conductive metal-containing film is separated from the gate insulating film by a distance of 2nm or more.
19. The method according to claim 17 , wherein the first conductive metal-containing film and the third conductive metal-containing film are formed from a same material.
20. The method according to claim 17 , wherein the first conductive metal-containing film and the third conductive metal-containing film include TiN films, and the second conductive metal-containing film includes a TiAlN film.