IP Library Patent Application 13426123
Patent Application
App. No. 13/426,123

SOLAR CELL FABRICATION USING A PRE-DOPING DIELECTRIC LAYER

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Quick Facts
Patent No.
US None
App. No.
13/426,123
Abstract

Solar cells, solar modules, and methods for their manufacture are disclosed. An example method may comprise forming a dielectric layer on at least one or more edges of a substrate, and then introducing dopant to at least one surface of the substrate. The substrate may be subjected to a heating process to at least drive the dopant to a predefined depth, thereby forming at least one of an emitter layer and a surface field layer. In the example method, the dielectric layer may not be removed during a subsequent manufacturing process. Associated solar cells and solar modules are also provided.

Claims (54)

1 . A method for manufacturing a solar cell comprising:

forming a dielectric layer on at least one or more edges of a substrate, and then;

introducing dopant to at least one surface of the substrate; and

subjecting the substrate to a heating process to at least drive the dopant to a predefined depth, thereby forming at least one of an emitter layer and a surface field layer;

wherein the dielectric layer is not removed during a subsequent manufacturing process.

2 . The method of claim 1 , wherein introducing dopant to at least one surface of the substrate further comprises:

introducing dopant to a first surface of the substrate such that subjecting the substrate to the heating process thereby forms an emitter layer proximate the first surface.

3 . The method of claim 2 , wherein introducing dopant to at least one surface of the substrate further comprises:

introducing dopant to a second surface of the substrate opposite the first surface such that subjecting the substrate to the heating process thereby forms a surface field layer proximate the second surface.

4 . The method of claim 3 , wherein the dopant introduced to the first surface is of a first conductivity type, and the dopant introduced to the second surface is of a second conductivity type opposite the first conductivity type.

5 . The method of claim 1 , wherein forming a dielectric layer on at least one or more edges of a substrate further comprises:

forming a dielectric layer on at least one surface of the substrate.

6 . The method of claim 1 , further comprising:

forming an antireflection layer over at least one surface of the substrate.

7 . The method of claim 1 , wherein forming a dielectric layer and introducing dopant further comprises:

introducing dopant to a first surface of the substrate, and then;

forming a dielectric layer on at least one or more edges of a substrate, and then;

introducing dopant to a second surface of the substrate opposite the first surface.

8 . The method of claim 1 , further comprising:

screen-printing one or more first contacts over a first surface of the substrate; and

screen-printing one or more second contacts over a second surface of the substrate opposite the first surface.

9 . The method of claim 8 , further comprising:

co-firing the one or more first and second contacts.

10 . The method of claim 1 , wherein introducing dopant to at least one surface of the substrate further comprises:

introducing dopant to at least one surface of the substrate by ion implantation.

11 . A solar cell manufactured by the steps of:

forming a dielectric layer on at least one or more edges of a substrate, and then;

introducing dopant to at least one surface of the substrate; and

subjecting the substrate to a heating process to at least drive the dopant to a predefined depth, thereby forming at least one of an emitter layer and a surface field layer;

wherein the dielectric layer is not removed during a subsequent manufacturing process.

12 . The solar cell of claim 11 , wherein introducing dopant to at least one surface of the substrate further comprises:

introducing dopant to a first surface of the substrate such that subjecting the substrate to the heating process thereby forms an emitter layer proximate the first surface.

13 . The solar cell of claim 12 , wherein introducing dopant to at least one surface of the substrate further comprises:

introducing dopant to a second surface of the substrate opposite the first surface such that subjecting the substrate to the heating process thereby forms a surface field layer proximate the second surface.

14 . The solar cell of claim 13 , wherein the dopant introduced to the first surface is of a first conductivity type, and the dopant introduced to the second surface is of a second conductivity type opposite the first conductivity type.

15 . The solar cell of claim 11 , wherein forming a dielectric layer on at least one or more edges of a substrate further comprises:

forming a dielectric layer on at least one surface of the substrate.

16 . The solar cell of claim 11 , further manufactured by the steps of:

forming an antireflection layer over at least one surface of the substrate.

17 . The solar cell of claim 11 , further manufactured by the steps of:

introducing dopant to a first surface of the substrate, and then;

forming a dielectric layer on at least one or more edges of a substrate, and then;

introducing dopant to a second surface of the substrate opposite the first surface.

18 . The solar cell of claim 11 , further manufactured by the steps of:

screen-printing one or more first contacts over a first surface of the substrate;

screen-printing one or more second contacts over a second surface of the substrate opposite the first surface; and

co-firing the one or more first and second contacts.

19 . The solar cell of claim 11 , wherein introducing dopant to at least one surface of the substrate further comprises:

introducing dopant to at least one surface of the substrate by ion implantation.

20 . A solar module comprising one or more solar cells manufactured by the steps of:

forming a dielectric layer on at least one or more edges of a substrate, and then;

introducing dopant to at least one surface of the substrate; and

subjecting the substrate to a heating process to at least drive the dopant to a predefined depth, thereby forming at least one of an emitter layer and a surface field layer;

wherein the dielectric layer is not removed during a subsequent manufacturing process.

Assignments (3)
SECURITY INTEREST Recorded Dec 17, 2015
From: SUNIVA, INC.
To: SQN ASSET SERVICING, LLC
Reel/Frame 037316/0228 →
PATENT AND TRADEMARK SECURITY AGREEMENT Recorded Jun 14, 2012
From: SUNIVA, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 028380/0595 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2012
From: YELUNDUR, VIJAY; GUPTA, ATUL; MOFFITT, JASEN
To: SUNIVA, INC.
Reel/Frame 027945/0802 →