Air-stable ink for scalable, high-throughput layer deposition
View Patent ↗A method for producing and depositing air-stable, easily decomposable, vulcanized ink on any of a wide range of substrates is disclosed. The ink enables high-volume production of optoelectronic and/or electronic devices using scalable production methods, such as roll-to-roll transfer, fast rolling processes, and the like.
1. A method comprising:
enabling vulcanization of an ink precursor, the ink precursor comprising sulfur, a first precursor comprising a first metal, and a second precursor comprising a second metal, wherein the sulfur, first precursor, and second precursor are dissolved in an organic solvent, and wherein the vulcanization of the ink precursor forms a first ink that comprises nanoparticles and a vulcanized ligand, the nanoparticles comprising copper and sulfur;
forming a first layer of the first ink on a substrate; and
enabling removal of organic materials from the first layer.
2. The method of claim 1 further comprising sulfurizing the first layer.
3. The method of claim 1 further comprising forming a buffer layer, wherein the buffer layer is disposed on the first layer.
4. The method of claim 3 wherein the buffer layer comprises cadmium sulfide.
5. The method of claim 3 further comprising forming a second layer disposed on the buffer layer, wherein second layer and the buffer layer collectively define at least a portion of an optoelectronic device structure.
6. The method of claim 5 wherein the second layer comprises zinc-oxide.
7. The method of claim 3 further comprising etching the first layer to remove a portion of the first layer.
8. The method of claim 1 further comprising providing the first precursor such that it comprises copper (Cu) and acetylacetonate (acac).
9. The method of claim 1 further comprising providing the first precursor such that it comprises Cu(acac) 2 .
10. The method of claim 1 further comprising providing the second precursor such that it comprises indium (In) and acac.
11. The method of claim 1 further comprising providing the second precursor such that it comprises In(acac) 3 .
12. The method of claim 1 wherein each of the nanoparticles further comprises indium.
13. The method of claim 1 further comprising:
providing the first precursor such that it comprises Cu(acac) 2 ; and
providing the second precursor such that it comprises In(acac) 3 .
14. The method of claim 1 wherein the removal of organic materials from the first layer is enabled by baking the substrate at a temperature greater than 80° C.
15. The method of claim 1 wherein the removal of organic materials from the first layer is enabled by baking the substrate at a temperature greater than 300° C.
16. The method of claim 1 wherein the removal of organic materials from the first layer is enabled by baking the substrate at a temperature of approximately 370° C.
17. The method of claim 1 wherein the first layer is formed by depositing the first ink on the substrate via a deposition method selected from the group consisting of ink rolling, doctor-blade coating, wire coating, silk screening, spray coating, roll-to-roll transfer, and spin coating.
18. The method of claim 1 further comprising forming a plurality of layers disposed on the first layer, wherein the plurality of layers collectively define an optoelectronic device structure.
19. The method of claim 18 wherein the plurality of layers are disposed such that they collectively define a solar cell structure.
20. The method of claim 18 wherein the plurality of layers are disposed such that they collectively define a light-emitting diode structure.
21. The method of claim 18 wherein the plurality of layers are disposed such that they collectively define a photodiode structure.
22. A method comprising:
mixing sulfur, Cu(acac) 2 , and In(acac) 3 in pyridine to form a first mixture;
vulcanizing the first mixture to provide a vulcanized ink comprising nanoparticles and a vulcanized ligand, the nanoparticles comprising copper and sulfur;
forming a first layer of the vulcanized ink on a substrate;
removing organic solvent from the first mixture by heating the first layer to a temperature within the range of approximately 250° C. to approximately 450° C.; and
sulfurizing the first layer.
23. The method of claim 22 further comprising the substrate, wherein the substrate comprises a second layer comprising molybdenum, and wherein the first layer is formed on a surface of the second layer.
24. The method of claim 22 wherein the first layer is sulfurized by exposing the first layer to elemental sulfur at a temperature within the range of approximately 400° C. to approximately 550° C.
25. The method of claim 24 wherein the first layer is exposed to elemental sulfur at a temperature of approximately 525° C.
26. The method of claim 22 wherein the organic solvent is removed from the first layer by heating the first layer to a temperature of approximately 370° C.