Semiconductor device with through silicon via and alignment mark
View Patent ↗A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor.
1. A semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface located opposite to each other in a thickness direction;
a semiconductor element formed on the first surface of the semiconductor substrate;
a through electrode penetrating the semiconductor substrate from the first surface to the second surface and electrically connected to the semiconductor element;
a conductor penetrating the semiconductor substrate from the first surface to the second surface and not electrically connected to the semiconductor element; and
an insulating separator penetrating the semiconductor substrate from the first surface to the second surface and formed in a shape of a ring surrounding the conductor.
2. The semiconductor device according to claim 1 ,
wherein the conductor has a metal material that is the same as a metal material of the through electrode.
3. The semiconductor device according to claim 1 ,
wherein the insulating separator is disposed apart from the conductor.
4. The semiconductor device according to claim 3 ,
wherein the insulating separator is formed of a closed curve in a plane parallel with the first and second surface.
5. The semiconductor device according to claim 1 ,
wherein the insulating separator directly makes contact with the conductor.
6. The semiconductor device according to claim 1 ,
wherein the insulating separator includes a silicon nitride film.
7. The semiconductor device according to claim 6 ,
wherein the insulating separator includes a silicon oxide film covered with the silicon nitride film.
8. The semiconductor device according to claim 1 ,
wherein the insulating separator contains polysilicon.
9. A semiconductor device comprising:
a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer;
a through electrode penetrating the semiconductor substrate in a thickness direction and which are electrically connected to each other between the semiconductor chips adjacent to each other;
a conductor penetrating the semiconductor substrate in the thickness direction and which are not electrically connected between the other semiconductor chips; and
an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor.
10. The semiconductor device according to claim 9 ,
wherein the conductor has a metal material that is the same as a metal material of the through electrode.
11. The semiconductor device according to claim 9 ,
wherein the insulating separator is disposed apart from the conductor.
12. The semiconductor device according to claim 11 ,
wherein the insulating separator is formed of a closed curve in a plane parallel with a surface of the semiconductor substrate.
13. The semiconductor device according to claim 9 ,
wherein the insulating separator directly makes contact with the conductor.
14. The semiconductor device according to claim 9 ,
wherein the insulating separator includes a silicon nitride film.
15. The semiconductor device according to claim 14 ,
wherein the insulating separator includes a silicon oxide film covered with the silicon nitride film.
16. The semiconductor device according to claim 9 ,
wherein the insulating separator contains polysilicon.