Semiconductor memory device

1. A semiconductor memory device comprising:

a plurality of word lines extending in a first direction;

first to third bit lines extending in a second direction that intersects with the first direction;

a plurality of variable resistance elements each having a first terminal connected to either one of the first and third bit lines;

a plurality of active areas extending in a direction oblique to the first direction while intersecting with the first to third bit lines;

a plurality of select transistors provided on the active areas and each having a gate connected to a corresponding one of the word lines, and a current path whose one end is connected to a second terminal of a corresponding one of the variable resistance elements; and

a plurality of contact plugs each connecting the other end of the current path of a corresponding one of the select transistors to the second bit line, wherein

each of the active areas includes two select transistors sharing a diffusion region,

the variable resistance elements includes a first variable resistance element group and a second variable resistance element group, the first variable resistance element group including variable resistance elements aligned in the second direction below the first bit line, and each disposed between adjacent two of the word lines, the second variable resistance element group including variable resistance elements aligned in the second direction below the third bit line, and each disposed between adjacent two of the word lines, and

the contact plugs are aligned in the second direction below the second bit line, and are each disposed between adjacent two of the word lines.

2. The semiconductor memory device according to claim 1 , wherein

the first to third bit lines are formed by a wiring layer at a same level.

3. The semiconductor memory device according to claim 1 , further comprising

a write circuit configured to set the second and third bit lines to have a same voltage when writing data the variable resistance elements connected to the first bit line.

4. The semiconductor memory device according to claim 3 , wherein

the write circuit delays a timing of applying a voltage to the third bit line from a timing of applying a voltage to the second bit line.

5. The semiconductor memory device according to claim 1 , further comprising

a write circuit configured to set the third bit line to be in a floating state in writing data the variable resistance elements connected to the first bit line.

6. The semiconductor memory device according to claim 1 , wherein

in the case where the word lines have a regular pitch, where the active areas have a regular pitch, and where the first to third bit lines intersect with the word lines at right angles, the active areas are inclined 45 degrees with respect to the first direction.

7. The semiconductor memory device according to claim 1 , wherein

each of the active areas has an island pattern, and intersects with the first to third bit lines and two of the word lines.

8. The semiconductor memory device according to claim 1 , wherein

each of the active areas has an island pattern and is approximately rhombic.

9. The semiconductor memory device according to claim 1 , further comprising

fourth to sixth bit lines extending in the second direction; and

a plurality of variable resistance elements each connected to either one of the fourth and sixth bit lines, wherein

the variable resistance elements includes a third variable resistance element group and a fourth variable resistance element group, the third variable resistance element group including variable resistance elements aligned in the second direction below the fourth bit line, and each disposed between adjacent two of the word lines, the fourth variable resistance element group including variable resistance elements aligned in the second direction below the sixth bit line, and each disposed between adjacent two of the word lines,

the plurality of variable resistance elements connected to the first and third bit lines serve as a first unit, and

the plurality of variable resistance elements connected to the fourth and sixth bit lines serve as a second unit.

10. The semiconductor memory device according to claim 9 , wherein

the active areas are separated from each other between the first unit and the second unit.

11. The semiconductor memory device according to claim 9 , wherein

the active areas are connected to each other between the first unit and the second unit.

12. The semiconductor memory device according to claim 1 , wherein

each of the variable resistance elements is a magnetic tunnel junction element having a reference layer, a non-magnetic layer, and a recording layer.

13. A semiconductor memory device comprising

a plurality of word lines extending in a first direction;

first to third bit lines extending in a second direction that intersects with the first direction;

a plurality of variable resistance elements each having a first terminal connected to either one of the first and third bit lines;

a plurality of active areas extending in a direction oblique to the first direction while intersecting with the first to third bit lines;

a plurality of select transistors provided on the active areas and each having a gate connected to a corresponding one of the word lines, and a current path whose one end is connected to a second terminal of a corresponding one of the variable resistance elements;

a plurality of contact plugs each connecting the other end of the current path of a corresponding one of the select transistors to the second bit line; and

a control circuit, wherein

the variable resistance elements includes a first variable resistance element group and a second variable resistance element group, the first variable resistance element group including variable resistance elements aligned in the second direction below the first bit line, and each disposed between adjacent two of the word lines, the second variable resistance element group including variable resistance elements aligned in the second direction below the third bit line, and each disposed between adjacent two of the word lines, and when writing data to the variable resistance elements, the control circuit is configured to set a selected one of the word lines at a high level, and to apply different voltages to the first and second bit lines in accordance with the write data.

14. The semiconductor memory device according to claim 13 , wherein

when writing data to the variable resistance elements, the control circuit is configured to apply a same voltage to the second and third bit lines.

15. The semiconductor memory device according to claim 14 , wherein

the control circuit is configured to delay a timing of applying a voltage to the third bit line from a timing of applying a voltage to the second bit line.

16. The semiconductor memory device according to claim 13 , wherein

when writing data to the variable resistance elements, the control circuit is configured to set the third bit line to be in a floating state.

17. The semiconductor memory device according to claim 13 , further comprising

fourth to sixth bit lines extending in the second direction; and

a plurality of variable resistance elements each connected to either one of the fourth and sixth bit lines, wherein

the plurality of variable resistance elements connected to the first and third bit lines serve as a first unit, and

the plurality of variable resistance elements connected to the fourth and sixth bit lines serve as a second unit.

18. The semiconductor memory device according to claim 17 , wherein

when writing data to the variable resistance elements, the control circuit is configured to apply different voltages to the first and second bit lines, and simultaneously applies different voltages to the fourth and fifth bit lines in accordance with the write data.

19. The semiconductor memory device according to claim 17 , wherein

when writing data to the variable resistance elements, the control circuit is configured to apply different voltages to the first and second bit lines, and simultaneously applies a same voltage to the fourth to sixth bit lines.

20. The semiconductor memory device according to claim 1 , wherein

the variable resistance elements of the first variable resistance element group are arranged in a first pitch equal to a pitch of the plurality of word lines in the first direction,

the variable resistance elements of the second variable resistance element group are arranged in the first pitch in the first direction, and

the contact plugs are aligned in the second direction below the second bit line are arranged in the first pitch in the first direction.

21. The semiconductor memory device according to claim 13 , wherein

the variable resistance elements of the first variable resistance element group are arranged in a first pitch equal to a pitch of the plurality of word lines in the first direction,

the variable resistance elements of the second variable resistance element group are arranged in the first pitch in the first direction, and

the contact plugs are aligned in the second direction below the second bit line are arranged in the first pitch in the first direction.