Highly-depleted laser doped semiconductor volume
A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
1. A photodiode device, comprising:
a substrate;
a first doped section formed at a side of the substrate;
a second doped section formed at an opposite side of the substrate from the first doped section; and
a laser treated semiconductor section adjacent to and in electrical contact with the first doped section such that the first doped region and the second doped region are positioned to generate an electric field substantially capable of depleting at least a portion of the laser treated semiconductor section of free carriers and separating resulting electron-hole pairs generated in the laser treated semiconductor section.
2. The device of claim 1 , further comprising:
a first contact coupled to the first doped section; and
a second contact coupled to the second doped section.
3. The device of claim 1 , wherein the first doped section and the second doped section are substantially annular and the laser treated section is substantially disk shaped.
4. The device of claim 1 , wherein the first doped section is n-doped and the second doped section is p-doped.
5. The device of claim 4 , wherein the laser treated semiconductor section includes a net doped n-type material and the n-doped first doped section has a higher level of n-doping than the laser treated semiconductor section.
6. The device of claim 1 , wherein the laser treated semiconductor section includes a micro structured surface.
7. The device of claim 1 , wherein the first doped section is a plurality of first doped sections.
8. The device of claim 7 , wherein the plurality of first doped sections is located on multiple sides of the laser treated semiconductor section.
9. A photodiode device, comprising:
a substrate;
a first doped section formed at a side of the substrate;
a second doped section formed at an opposite side of the substrate from the first doped section; and
a microstructured surface adjacent to and in electrical contact with the first doped section such that the first doped region and the second doped region are positioned to generate an electric field substantially capable of separating electron-hole pairs generated in the microstructured surface and moving resulting carriers to an appropriate contact.
10. The device of claim 9 , further comprising:
a first contact coupled to the first doped section; and
a second contact coupled to the second doped section.
11. The device of claim 9 , wherein the first doped section and the second doped section are substantially annular and the microstructured surface is substantially disk shaped.
12. The device of claim 9 , wherein the first doped section is n-doped and the second doped section is p-doped.
13. The device of claim 12 , wherein the microstructured surface includes a net doped n-type material and the n-doped first doped section has a higher level of n-doping than the microstructured surface.
14. The device of claim 9 , wherein the microstructured surface is a short pulse laser modified surface.
15. The device of claim 14 , wherein the short pulse laser modified surface is modified with femtosecond laser pulses or picosecond laser pulses.
16. The device of claim 9 , wherein the first doped section is a plurality of first doped sections.
17. The device of claim 16 , wherein the plurality of first doped sections is located on multiple sides of the microstructured surface.