Back-side MOM/MIM devices
View Patent ↗Back-side MOM/MIM structures are integrated on a device with front-side circuitry. Embodiments include forming a substrate having a front side and a back side that is opposite the front side, the substrate including circuitry on the front side of the substrate; and forming a metal-oxide-metal (MOM) capacitor, a metal-insulator-metal (MIM) capacitor, or a combination thereof on the back side of the substrate. Other embodiments include forming a through-silicon via (TSV), in the substrate, connecting the MOM capacitor, the MIM capacitor, or a combination thereof to the circuitry on the front side of the substrate.
1. A method comprising:
forming a substrate having a front side and a back side that is opposite the front side, the substrate including circuitry on the front side of the substrate; and
forming a metal-oxide-metal (MOM) capacitor, a metal-insulator-metal (MIM) capacitor, or a combination thereof, on the back side of the substrate;
wherein the circuitry on the front side of the substrate includes a front-side MOM capacitor, a front-side MIM capacitor, or a combination thereof; each of the front-side and back-side capacitors comprising a plurality of layers, and wherein dimensions of each layer of the back-side capacitors are substantially greater than dimensions of each layer of the front-side capacitors.
2. The method according to claim 1 , comprising forming a through-silicon via (TSV), in the substrate, connecting the back-side MOM capacitor, the back-side MIM capacitor, or a back-side combination thereof, to the circuitry on the front side of the substrate.
3. The method according to claim 1 , comprising forming the back-side MOM capacitor by forming a plurality of parallel fingers.
4. The method according to claim 3 , comprising forming the parallel fingers by forming a plurality of ultra thick metal (UTM) fingers.
5. The method according to claim 1 , comprising forming the back-side MOM capacitor by: forming a first layer, including a first set of parallel fingers, on the back side of the substrate; and
forming one or more other layers, including one or more other sets of parallel fingers, under the first layer on the back side of the substrate.
6. The method according to claim 1 , comprising forming the back-side MOM capacitor by forming a layer including a first set of interconnected fingers and a second set of interconnected fingers, interlaced therewith.
7. The method according to claim 1 , comprising forming the back-side MIM capacitor by forming a first plate, a second plate, and a dielectric layer between the first plate and the second plate.
8. A device comprising:
a substrate having a front side and a back side that is opposite the front side;
circuitry on the front side of the substrate; and
a metal-oxide-metal (MOM) capacitor, a metal-insulator-metal (MIM) capacitor, or a combination thereof, on the back side of the substrate;
wherein the circuitry on the front side of the substrate includes a front-side MOM capacitor, a front-side MIM capacitor, or a combination thereof; each of the front-side and back-side capacitors comprising a plurality of layers, and wherein dimensions of each layer of the back-side capacitors are substantially greater than dimensions of each layer of the front-side capacitors.
9. The device according to claim 8 , comprising: a through-silicon via (TSV), in the substrate, connecting the back-side MOM capacitor, the back-side MIM capacitor, or a back-side combination thereof to the circuitry on the front side of the substrate.
10. The device according to claim 8 , wherein the back-side MOM capacitor includes a plurality of parallel fingers.
11. The device according to claim 10 , wherein the parallel fingers include a plurality of ultra thick metal (UTM) fingers.
12. The device according to claim 8 , wherein the back-side MOM capacitor comprises: a first layer, including a first set of parallel fingers, on the back side of the substrate; and one or more other layers, including one or more other sets of parallel fingers, under the first layer on the back side of the substrate.
13. The device according to claim 8 , wherein the back-side MOM capacitor comprises a layer including a first set of interconnected fingers and a second set of interconnected fingers, interlaced therewith.
14. The device according to claim 8 , wherein the back-side MIM capacitor includes a first plate, a second plate, and a dielectric layer between the first plate and the second plate.
15. A method comprising:
forming a substrate having a front side and a back side that is opposite the front side; forming circuitry on the front side of the substrate; forming a through-silicon via (TSV), in the substrate, electrically connected to the circuitry on the front side of the substrate; and
forming a metal-oxide-metal (MOM) capacitor, a metal-insulator-metal (MIM) capacitor, or a combination thereof, on the back side of the substrate, electrically connected to the TSV;
wherein the circuitry on the front side of the substrate includes a front-side MOM capacitor, a front-side MIM capacitor, or a combination thereof; each of the front-side and back-side capacitors comprising a plurality of layers, and wherein dimensions of each layer of the back-side capacitors are substantially greater than dimensions of each layer of the from-side capacitors.
16. The method according to claim 15 , further comprising:
forming the back-side MOM capacitor by forming at least one layer, each layer including a plurality of parallel fingers, on the back side of the substrate.
17. The method according to claim 15 , further comprising:
forming the back-side MIM capacitor by forming a first plate, a second plate, and a dielectric layer between the first plate and the second plate.
18. The method according to claim 15 , comprising packaging the MOM capacitors, the MIM capacitors, or a combination thereof with other circuitry, devices, or a combination thereof, using standard chip stack/package technology.