INTEGRATED CIRCUIT HAVING A STAGGERED HETEROJUNCTION BIPOLAR TRANSISTOR ARRAY
An integrated circuit is provided. The integrated circuit may include, but is not limited to, a plurality of heterojunction bipolar transistors, wherein each heterojunction bipolar transistor is staggered with respect to any adjacent heterojunction bipolar transistor. The plurality of heterojunction bipolar transistors may be arranged in a column, wherein each heterojunction bipolar transistor is staggered in the column with respect to any adjacent heterojunction bipolar transistor in the column in a first direction and a second direction, wherein the second direction is substantially orthogonal to the first direction.
1 . An integrated circuit, comprising:
a plurality of heterojunction bipolar transistors, wherein each heterojunction bipolar transistor is staggered with respect to any adjacent heterojunction bipolar transistor of the plurality of heterojunction bipolar transistors.
2 . The integrated circuit of claim 1 , wherein each heterojunction bipolar transistor is staggered with respect to any adjacent heterojunction bipolar transistor in a first direction and a second direction, wherein the second direction is substantially orthogonal to the first direction.
3 . The integrated circuit of claim 1 , wherein the plurality of heterojunction bipolar transistors are arranged in a column, and each heterojunction bipolar transistor is staggered in the column with respect to any adjacent heterojunction bipolar transistor in the column in a first direction and a second direction, wherein the second direction is substantially orthogonal to the first direction.
4 . The integrated circuit of claim 1 , wherein the plurality of heterojunction bipolar transistors are arranged in a plurality of columns, and each heterojunction bipolar transistor is staggered in its column with respect to any adjacent heterojunction bipolar transistor in its column in a first direction and a second direction, wherein the second direction is substantially orthogonal to the first direction and each heterojunction bipolar transistor is staggered with respect to adjacent heterojunction bipolar transistor in other columns in the first direction and the second direction.
5 . The integrated circuit of claim 1 , wherein each heterojunction bipolar transistor comprises:
a single collector contact disposed on a first layer;
a base contact disposed on a second layer, the second layer being disposed on the first layer; and
an emitter contact disposed on a third layer, the third layer being disposed on the second layer.
6 . The integrated circuit of claim 5 wherein each heterojunction bipolar transistor further comprises a second collector contact disposed on the first layer.
7 . The integrated circuit of claim 5 , further comprising a plurality of ballasting resistors, wherein each ballasting resistor is coupled to the emitter contact of a different heterojunction bipolar transistor.
8 . The integrated circuit of claim 7 , wherein each ballasting resistor is coupled between the emitter contact of the different heterojunction bipolar transistor and ground.
9 . The integrated circuit of claim 8 , wherein each base contact in each column of heterojunction bipolar transistors is coupled to a common base biasing trace.
10 . The integrated circuit of claim 9 , wherein each collector contact in each column of heterojunction bipolar transistors is coupled to a common collector biasing trace.
11 . The integrated circuit of claim 5 , further comprising a plurality of ballasting resistors, wherein each ballasting resistor is coupled to the base contact of a different heterojunction bipolar transistor.
12 . The integrated circuit of claim 11 , wherein each ballasting resistor in each column of heterojunction bipolar transistors is coupled between the base contact of the different heterojunction bipolar transistor and a common base biasing trace.
13 . The integrated circuit of claim 12 , wherein each emitter contact in each column of heterojunction bipolar transistors is coupled to a ground.
14 . The integrated circuit of claim 13 , wherein each collector contact in each column of heterojunction bipolar transistors is coupled to a common collector biasing trace.
15 . The integrated circuit of claim 5 , wherein the base contact is substantially L shaped.
16 . The integrated circuit of claim 5 , wherein the base contact is substantially U shaped.
17 . A heterojunction bipolar transistor, comprising:
a single collector contact disposed on a first layer;
a base contact disposed on a second layer, the second layer being disposed on the first layer; and
an emitter contact disposed on a third layer, the third substrate being disposed on the second layer.
18 . The heterojunction bipolar transistor of claim 17 , wherein the base contact is substantially L shaped.
19 . The heterojunction bipolar transistor of claim 17 , wherein the base contact is substantially U shaped.
20 . The heterojunction bipolar transistor of claim 18 , further comprising a ballasting resistor, wherein the ballasting resistor is coupled to the emitter contact.