Method for printed circuit board trace characterization

1. A method for characterizing a device under test in a trace structure, the trace structure comprising:

a probing structure;

the device under test; and

a termination structure;

wherein the probing structure is connected to one side of the device under test and the termination structure is connected to the other side of the device under test, the method comprising the steps of:

determining the s-parameters of the termination structure for a first mode at at least one frequency;

determining the s-parameters of the trace structure for a second mode at a plurality of frequencies;

calculating a time limited time-domain waveform in accordance with the s-parameters of the trace structure;

determining a reflection coefficient at the least one frequency in accordance with the time limited time-domain waveform; and

determining a loss characteristic of the device under test for a third mode at the at least one frequency in accordance with the reflection coefficient, the s-parameters of the termination structure, and the at least one frequency.

2. The method according to claim 1 wherein the first mode, the second mode and the third mode are the same mode.

3. The method according to claim 1 wherein at least two of the first mode, the second mode and the third mode are the same mode.

4. The method according to claim 1 wherein the first mode, the second mode and the third mode are the different modes.

5. The method according to claim 1 wherein the step of determining the s-parameters of the trace structure at the plurality of frequencies comprises the steps of:

determining the single-ended s-parameters of the trace structure at the plurality of frequencies; and

converting the single-ended s-parameters of the trace structure to the s-parameters of the trace structure for a different mode at the plurality of frequencies.

6. The method according to claim 5 wherein the step of determining the s-parameters of the trace structure at the plurality of frequencies comprises measuring the single-ended s-parameters of the trace structure at the plurality of frequencies.

7. The method according to claim 1 wherein the step of determining the s-parameters of the trace structure at the plurality of frequencies comprises measuring the s-parameters of the trace structure at the plurality of frequencies.

8. The method according to claim 1 wherein the step of determining the s-parameters of the termination structure at the at least one frequency comprises the steps of:

determining the single-ended s-parameters of the termination structure for the at least one frequency; and

converting the single-ended s-parameters of the termination structure to the s-parameters of the termination structure for a different mode at the at least one frequency.

9. The method according to claim 8 wherein the step of determining the s-parameters of the trace structure at the plurality of frequencies comprises measuring the single-ended s-parameters of the trace structure at a plurality of frequencies.

10. The method according to claim 1 wherein the step of determining the s-parameters of the termination structure at the at least one frequency comprises measuring the s-parameters of the termination structure for a mode at at least one frequency.

11. The method according to claim 1 wherein the step of calculating the time limited time-domain waveform in accordance with the s-parameters of the trace structure comprises the steps of:

calculating a time-domain waveform in accordance with the s-parameters of the trace structure;

determining the time location of the reflection from the termination structure in the time-domain waveform; and

determining a time limited time-domain waveform in accordance with the time-domain waveform and the time location.

12. The method according to claim 1 further comprising the steps of:

determining reflection coefficients at the plurality of frequencies in accordance with the time limited time-domain waveform;

determining loss characteristics of the device under test at the plurality of frequencies in accordance with the reflection coefficients at the plurality of frequencies, the s-parameters of the termination structure at the plurality of frequencies, and the plurality of frequencies; and

fitting a function in accordance with the loss characteristics at the plurality of frequencies.

13. The method according to claim 12 wherein the function comprises a term that is linear in frequency.

14. The method according to claim 12 wherein the function comprises a term that is linear in the square-root of frequency.

15. The method according to claim 1 further comprising the step of determining a delay characteristic at the at least one frequency in accordance with the reflection coefficient, the s-parameters of the termination structure, and the at least one frequency.

16. The method according to claim 15 further comprising the steps of:

determining a complex thru coefficient in accordance with the delay characteristic at the at least one frequency and the loss characteristic at the at least one frequency; and

determining the s-parameters of the device under test at the at least one frequency in accordance with the reflection coefficient at the at least one frequency and the complex thru coefficient at the at least one frequency.

17. The method according to claim 16 further comprising the step of determining the single-ended s-parameters of the device under test at the at least one frequency in accordance with the s-parameters of the device under test at the at least one frequency.

18. The method according to claim 17 further comprising the step of fitting the single-ended s-parameters of the device under test to the s-parameters of the trace structure at the at least one frequency.