ReRAM device structure
A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer inlcudes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.
1. A resistive random access memory (ReRAM), comprising:
a first metal layer comprising a first metal, wherein the first metal layer has a first sidewall;
a metal-oxide layer on the first metal layer, wherein the metal-oxide layer comprises the first metal and has a second sidewall aligned with the first sidewalls;
a second metal layer, the metal-oxide layer having a bottom surface in physical contact with a top surface of the metal-oxide layer and having a third sidewall;
a first continuous conductive barrier layer in physical contact with the first and second sidewalls; and
a second continuous conductive barrier layer in physical contact with the third sidewall and electrically isolated from the first continuous conductive barrier layer,
wherein:
the second continuous conductive barrier layer has a bottom surface in physical contact with a top surface of the metal oxide layer and;
the second metal layer has a to surface free of the second continuous conductive barrier layer.
2. The ReRAM of claim 1 , further comprising: a first dielectric layer surrounding the first sidewalls and the second sidewalls, wherein the first continuous conductive barrier layer is between the first dielectric layer and the first and second sidewalls; and a second dielectric layer surrounding the sidewalls of the second metal layer, wherein the second continuous conductive barrier layer is between the second dielectric layer and the sidewalls of the second metal layer.
3. The ReRAM of claim 1 , wherein the second metal layer is located within a perimeter of a first major surface of the metal-oxide layer.
4. The ReRAM of claim 1 , wherein the first continuous conductive barrier layer extends under the first metal layer.
5. The ReRAM of claim 1 , wherein the first metal layer comprises copper, and the metal-oxide layer comprises copper oxide.
6. The ReRAM of claim 1 , wherein the first continuous conductive barrier layer comprises nitride.
7. The ReRAM of claim 1 , wherein the metal-oxide layer is further characterized as a storage medium.
8. A resistive random access memory (ReRAM), comprising:
a first metal layer comprising a first metal and having a top surface, wherein the first metal layer has a first sidewall;
a metal-oxide layer having a bottom surface in physical contact with the top surface of the first metal layer, wherein
the metal-oxide layer comprises the first metal,
the metal oxide layer has a second sidewall; and
the second sidewall is aligned with the first sidewall;
a second metal layer having a bottom surface in physical contact with a top surface of the metal-oxide layer, wherein
the bottom surface of the second metal layer is smaller than and within the top surface of the metal-oxide layer, and
the second metal layer has a third sidewall;
a first continuous conductive barrier layer in physical contact with the first and second sidewalls; and
a second continuous conductive barrier layer in physical contact with the third sidewall and in physical contact with the top surface of the metal-oxide layer,
wherein:
the second continuous conductive barrier layer is within the top surface of the metal-oxide layer and is physically separate from the first continuous conductive barrier layer; and
the second metal layer has a top surface free of the second continuous conductive barrier layer.
9. The ReRAM of claim 8 , wherein the first continuous conductive barrier layer is in physical contact the first metal layer.