Method to Determine the Thickness of a Thin Film During Plasma Deposition
The present invention provides a method to determine the thickness of a thin film during deposition. A target film thickness is set. A substrate is placed within a deposition system. The thin film is deposited onto the substrate within the deposition system. Radiation reflected from the substrate is monitored at multiple wavelengths during the deposition of the thin film using standard OEI techniques. A value derived from the reflected radiation is monitored. A time is detected at which the derived value is at a target value. A film thickness is calculated at the detected times to generate data. A mathematical analysis is performed on the generated data to determine an equation for deposited film thickness versus time. The calculated equation for deposited film thickness versus time is used to achieve the target film thickness.
1 . A method to determine the thickness of a thin film during deposition, said method comprising the steps of:
setting a target film thickness;
placing a substrate within a deposition system;
depositing the thin film onto the substrate within the deposition system;
monitoring radiation reflected from the substrate at multiple wavelengths during the deposition of the thin film;
monitoring a value derived from the reflected radiation;
detecting a time at which the derived value achieves a target value;
calculating a film thickness at the detected times to generate data;
performing a mathematical analysis on the generated data to determine an equation for deposited film thickness versus time; and
using the determined equation for deposited film thickness versus time to obtain an estimated time to achieve the target film thickness.
2 . The method of claim 1 further comprising terminating the deposition of the thin film when the estimated time achieves the target film thickness.
3 . The method of claim 1 further comprising changing the deposition of the thin film when the estimated time achieves the target film thickness.
4 . The method of claim 1 wherein the target value is an extrema.
5 . The method of claim 1 wherein the multiple wavelengths further comprising wavelengths between 290 nm to 420 nm.
6 . The method of claim 1 wherein the multiple wavelengths further comprising wavelengths emitted by molecular Nitrogen.
7 . The method of claim 1 wherein the mathematical analysis further comprising a regression analysis.
8 . The method of claim 7 wherein the regression analysis further comprising a linear fit.
9 . The method of claim 8 wherein the regression analysis further comprising a polynomial fit.
10 . The method of claim 1 wherein the detecting step further comprising applying a statistical technique to detect a true time of the minimum value.
11 . The method of claim 1 wherein the calculating step further comprising using a known wavelength and a pre-calculated refractive index of the thin film.
12 . The method of claim 11 wherein the refractive index is pre-calculated from a thick film of the thin film.
13 . A method to determine the thickness of a thin film during plasma deposition, said method comprising the steps of:
setting a target film thickness;
placing a substrate within a plasma deposition system;
introducing a reactive gas into the plasma deposition system;
igniting a plasma from the reactive gas within the plasma deposition system;
depositing the thin film from the ignited plasma onto the substrate within the plasma deposition system;
monitoring plasma emitted radiation reflected from the substrate at multiple wavelengths during the deposition of the thin film;
monitoring a value derived from the reflected plasma radiation;
detecting a time at which the derived value achieves a target value;
calculating a film thickness at the detected times to generate data;
performing a mathematical analysis on the generated data to determine an equation for deposited film thickness versus time; and
using the determined equation for deposited film thickness versus time to obtain an estimated time to achieve the target film thickness.
14 . The method of claim 13 further comprising terminating the deposition of the thin film when the estimated time achieves the target film thickness.
15 . The method of claim 13 further comprising changing the deposition of the thin film when the estimated time achieves the target film thickness.
16 . The method of claim 13 wherein the plasma deposition of the thin film is terminated when the calculated equation film thickness equals the target film thickness.
17 . The method of claim 13 wherein the plasma deposition of the thin film is changed when the calculated equation film thickness equals the target film thickness.
18 . The method of claim 13 wherein the multiple wavelengths further comprising wavelengths between 290 nm to 420 nm.
19 . The method of claim 13 wherein the multiple wavelengths further comprising wavelengths emitted by molecular Nitrogen.
20 . The method of claim 13 wherein the mathematical analysis further comprising a regression analysis.
21 . The method of claim 20 wherein the regression analysis further comprising a linear fit.
22 . The method of claim 21 wherein the regression analysis further comprising a polynomial fit.
23 . The method of claim 13 wherein the detecting step further comprising applying a statistical technique to detect a true time of the minimum value.
24 . The method of claim 13 wherein the calculating step further comprising using a known wavelength and a pre-calculated refractive index of the thin film.
25 . The method of claim 24 wherein the refractive index is pre-calculated from a thick film of the thin film.
26 . A method to determine the thickness of a thin film during deposition, said method comprising the steps of:
setting initial values for refractive index using at least two wavelengths;
setting a target film thickness;
placing a substrate within a deposition system;
depositing the thin film onto the substrate within the deposition system;
monitoring intensity versus time at said two wavelengths during deposition of the thin film;
terminating the process when the target film thickness is achieved;
measuring the film thickness;
calculating the refractive index at the at least two wavelengths using the measured film thickness;
updating the initial values of refractive index for the at least two wavelengths; and
processing the next substrate using the updated initial values of refractive index for the at least two wavelengths.