Interconnection Schemes for Photovoltaic Cells
In particular embodiments, a method is described for fabricating a photovoltaic cell and includes providing a substrate; depositing a bottom-contact layer over the substrate; masking a portion of the bottom-contact layer; depositing a photovoltaic-absorber layer over the bottom-contact layer; and depositing a top-contact layer over the a photovoltaic-absorber layer. A portion of the bottom-contact layer is left exposed after depositing the photovoltaic-absorber layer and the top-contact layer as a result of the masking, thereby leaving the exposed portion of the bottom-contact layer suitable for use as an electrical contact.
1 . A photovoltaic cell, comprising:
a substrate;
a bottom-contact layer positioned over the substrate, wherein a portion of a top surface of the bottom-contact layer is exposed and electrically connected to a first adjacent cell with a first interconnection;
a photovoltaic-absorber layer positioned over the bottom-contact layer such that the portion of the top surface of the bottom-contact layer remains exposed; and
a top-contact layer positioned over the photovoltaic-absorber layer, wherein a portion of a top surface of the top-contact layer is electrically connected to a second adjacent cell with a second interconnection.
2 . The photovoltaic cell of claim 1 , wherein the top-contact layer comprises AZO (Al 2 O 3 doped ZnO), IZO (Indium Zinc Oxide), or ITO (Indium Tin Oxide or tin-doped indium oxide).
3 . The photovoltaic cell of claim 1 , wherein the photovoltaic-absorber layer comprises a Copper-Zinc-Tin-Sulfur/Selenide (CZTS) material layer.
4 . The photovoltaic cell of claim 1 , wherein the photovoltaic-absorber layer comprises a p-type semiconducting layer.
5 . The photovoltaic cell of claim 1 , wherein the photovoltaic-absorber layer comprises a Copper-Indium-Gallium-Diselenide (CIGS) material layer.
6 . The photovoltaic cell of claim 1 , wherein the photovoltaic-absorber layer comprises one or more of a Copper-Zinc-Tin-Sulfur/Selenide (CZTS) material layer, a p-type semiconducting layer, or a Copper-Indium-Gallium-Diselenide (CIGS) material layer.
7 . The photovoltaic cell of claim 1 , further comprising a buffer layer positioned between the photovoltaic-absorber layer and the top-contact layer such that the portion of the top surface of the bottom-contact layer remains exposed.
8 . The photovoltaic cell of claim 7 , wherein the buffer layer comprises an n-type semiconducting material.
9 . The photovoltaic cell of claim 7 , further comprising an i-type oxide layer positioned between the buffer layer and the top-contact layer such that the portion of the top surface of the bottom-contact layer remains exposed.
10 . The photovoltaic cell of claim 1 , further comprising an electrically conductive grid positioned over the top-contact layer such that the portion of the top surface of the bottom-contact layer remains exposed.
11 . The photovoltaic cell of claim 1 , wherein a combined thickness of the bottom-contact layer, the photovoltaic-absorber layer, the top-contact layer, and any layers between these layers is less than one percent of the thickness of the substrate.
12 . A method, comprising:
depositing a bottom-contact layer onto a substrate;
applying a mask to the bottom-contact layer;
depositing a photovoltaic-absorber layer onto the bottom-contact layer, wherein a first portion of a top surface of the bottom-contact layer remains exposed after depositing the photovoltaic-absorber layer;
depositing a top-contact layer onto the photovoltaic-absorber layer, wherein the first portion of the top surface of the bottom-contact layer remains exposed after depositing the top-contact layer; and connecting the first portion of the top surface of the bottom-contact layer to a first adjacent cell with a first interconnection.
13 . The method of claim 12 , wherein applying the mask to the bottom-contact layer comprises using photolithography to selectively remove one or more portions of the photovoltaic-absorber layer and the top-contact layer and any layers therebetween, such that the first portion of the top surface of the bottom-contact layer is exposed.
14 . The method of claim 12 , wherein applying the mask to the bottom-contact layer comprises using a sample holder that comprises a protrusion that covers a portion of the bottom-contact layer during the deposition of the photovoltaic-absorber layer and the top-contact layer and any layers therebetween, such that the first portion of the top surface of the bottom-contact layer is exposed.
15 . The method of claim 12 , further comprising annealing the substrate, the bottom-contact layer, and the photovoltaic layer after deposition of the photovoltaic-absorber layer and prior to deposition of the top-contact layer.
16 . The method of claim 12 , further comprising depositing a buffer layer onto the photovoltaic-absorber layer and under the top-contact layer, wherein the first top portion of the top surface of the bottom contact layer is exposed after deposition the buffer layer.
17 . The method of claim 16 , wherein the buffer layer comprises an n-type semiconducting material.
18 . The method of claim 16 , further comprising depositing an i-type oxide layer onto the buffer layer and under the top-contact layer, wherein the first top portion of the top surface of the bottom contact layer is exposed after deposition the i-type oxide layer.
19 . The method of claim 12 , further comprising depositing an electrically conductive grid onto the top-contact layer.
20 . The method of claim 12 , wherein the top-contact layer comprises AZO (Al 2 O 3 doped ZnO), IZO (Indium Zinc Oxide), or ITO (Indium Tin Oxide or tin-doped indium oxide).
21 . The method of claim 12 , wherein the photovoltaic-absorber layer comprises a Copper-Zinc-Tin-Sulfur/Selenide (CZTS) material layer.
22 . The method of claim 12 , wherein the photovoltaic-absorber layer comprises a p-type semiconducting layer.
23 . The method of claim 12 , wherein the photovoltaic-absorber layer comprises a Copper-Indium-Gallium-Diselenide (CIGS) material layer.
24 . The method of claim 12 , wherein the photovoltaic-absorber layer comprises one or more of a Copper-Zinc-Tin-Sulfur/Selenide (CZTS) material layer, a p-type semiconducting layer, or a Copper-Indium-Gallium-Diselenide (CIGS) material layer.