Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
View Patent ↗A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.
1. A semiconductor device comprising:
a substrate;
a lightly n-doped SiC epitaxial layer on the substrate, the SiC epitaxial layer having a lower surface in contact with the substrate;
a semi-insulating region in the SiC epitaxial layer adjacent the lower surface of the SiC epitaxial layer, wherein the semi-insulating region comprises boron related D-centers that compensate for the light n-doping of the SiC epitaxial layer.
2. The semiconductor device of claim 1 , further comprising a boron implanted region in the substrate adjacent the semi-insulating region.
3. The semiconductor device of claim 1 , wherein the lightly n-doped SiC epitaxial layer is doped with shallow nitrogen donors.
4. The semiconductor device of claim 1 , wherein the substrate comprises SiC.
5. The semiconductor device of claim 1 , wherein the device is a vertical bipolar junction transistor or a vertical junction field effect transistor.
6. The semiconductor device of claim 1 , wherein the boron related D-centers are distributed in the SiC epitaxial layer consistent with diffusion of boron from a source below the lower surface up into the SiC epitaxial layer.
7. The semiconductor device of claim 6 , wherein the boron related D-centers are distributed in the SiC epitaxial layer consistent with diffusion at a temperature between about 1,500° C. and about 1,700° C. for a time period between about 1 hour and about 3 hours.
8. A semiconductor device comprising:
a substrate;
a first epitaxial layer on the substrate;
a second lightly n-doped SiC epitaxial layer on the first epitaxial layer, the second epitaxial layer having a lower surface in contact with the first epitaxial layer;
a semi-insulating region in the SiC epitaxial layer adjacent the lower surface of the SiC epitaxial layer, wherein the semi-insulating region comprises boron related D-centers that compensate for the light n-doping of the SiC epitaxial layer.
9. The semiconductor device of claim 8 , further comprising a boron implanted region in the first epitaxial layer adjacent the semi-insulating region.
10. The semiconductor device of claim 8 , wherein the lightly n-doped SiC epitaxial layer is doped with shallow nitrogen donors.
11. The semiconductor device of claim 8 , wherein the first epitaxial layer comprises SiC.
12. The semiconductor device of claim 8 , further comprising one or more trenches formed in the first epitaxial layer, the one or more trenches each comprising a lower surface and sidewalls, wherein an upper surface of the first epitaxial layer is adjacent the one or more trenches and wherein the second epitaxial layer fills the trenches and forms a self-planarized layer above the trenches.
13. The semiconductor device of claim 12 , wherein the semi-insulating region is adjacent the lower surface of the one or more trenches.
14. The semiconductor device of claim 12 , wherein the semi-insulating region is adjacent the upper surface of the first epitaxial layer.
15. The semiconductor device of claim 8 , wherein the device is a vertical bipolar junction transistor or a vertical junction field effect transistor.
16. The semiconductor device of claim 8 , wherein the boron related D-centers are distributed in the SiC epitaxial layer consistent with diffusion of boron from a source below the lower surface up into the SiC epitaxial layer.
17. The semiconductor device of claim 8 , wherein the boron related D-centers are distributed in the SiC epitaxial layer consistent with diffusion at a temperature between about 1,500° C. and about 1,700° C. for a time period between about 1 hour and about 3 hours.