Patent Assignment
Reel/Frame 030740/0368
Assignment of Assignor's Interest
Recorded: 2013-07-05
Pages: 20
Assignor
SS SC IP, LLC
Executed: 2012-12-14
Assignee
POWER INTEGRATIONS, INC.
5245 HELLYER AVENUE, SAN JOSE, CALIFORNIA, 94538
Covered Properties
(64)
Power Sic Devices Having Raised Guard Rings
Silicon Carbide Bipolar Junction Transistor with Overgrown Base Region
Lateral Trench Field-Effect Transistors in Wide Bandgap Semiconductor Materials, Methods of Making, and Integrated Circuits Incorporating the Transistors
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Self-Aligned Silicon Carbide Semiconductor Devices and Methods of Making the Same
Monolithic Vertical Junction Field Effect Transistor and Schottky Barrier Diode Fabricated from Silicon Carbide and Method for Fabricating the Same
Vertical-channel junction field-effect transistors having buried gates
Application:
11/198,298 →
Publication:
US 2007/0029573
Self-Aligned Trench Field Effect Transistors with Regrown Gates and Bipolar Junction Transistors with Regrown Base Contact Regions and Methods of Making
Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making
Application:
11/396,615 →
Publication:
US 2007/0228505
Semiconductor Device with Surge Current Protection and Method of Making the Same
Patent:
7,274,083 →
Application:
11/415,279 →
Lateral Trench Field-Effect Transistors in Wide Bandgap Semiconductor Materials, Methods of Making, and Integrated Circuits Incorporating the Transistors
Self-Aligned Silicon Carbide Semiconductor Devices and Methods of Making the Same
Silicon Carbide and Related Wide-Bandgap Transistors on Semi Insulating Epitaxy
Optically Controlled Silicon Carbide and Related Wide-Bandgap Transistors and Thyristors
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Monolithic Vertical Junction Field Effect Transistor and Schottky Barrier Diode Fabricated from Silicon Carbide and Method for Fabricating the Same
Method of Making a Semiconductor Device with Surge Current Protection
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Vertical Junction Field Effect Transistor with Mesa Termination and Method of Making the Same
Self-Aligned Trench Field Effect Transistors with Regrown Gates and Bipolar Junction Transistors with Regrown Base Contact Regions and Methods of Making
Application:
11/934,805 →
Publication:
US 2008/0061362
Vertical-Channel Junction Field-Effect Transistors Having Buried Gates and Methods of Making
Epitaxial Growth on Low Degree Off-Axis Sic Substrates and Semiconductor Devices Made Thereby
Methods of Making Lateral Junction Field Effect Transistors Using Selective Epitaxial Growth
Patent:
7,560,325 →
Application:
12/102,382 →
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
Junction Barrier Schottky Rectifiers Having Epitaxially Grown P+-N Junctions and Methods of Making
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
High Temperature Gate Drivers for Wide Bandgap Semiconductor Power Jfets and Integrated Circuits Including the Same
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Vertical Junction Field Effect Transistors Having Sloped Sidewalls and Methods of Making
Gate Driver for Enhancement-Mode and Depletion-Mode Wide Bandgap Semiconductor Jfets
Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making
Methods of Making Vertical Junction Field Effect Transistors and Bipolar Junction Transistors Without Ion Implantation
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Silicon Carbide and Related Wide-Bandgap Transistors on Semi Insulating Epitaxy
Vertical Junction Field Effect Transistors Having Sloped Sidewalls and Methods of Making
Methods of Making Semiconductor Devices Having Implanted Sidewalls and Devices Made Thereby
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Cascode Switches Including Normally-Off and Normally-on Devices and Circuits Comprising the Switches
Application:
13/085,648 →
Publication:
US 2012/0262220
High Temperature Gate Drivers for Wide Bandgap Semiconductor Power Jfets and Integrated Circuits Including the Same
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
Self-Aligned Semiconductor Devices with Reduced Gate-Source Leakage Under Reverse Bias and Methods of Making
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making
Vertical Junction Field Effect Transistors with Improved Thermal Characteristics and Methods of Making
Silicon Carbide and Related Wide-Bandgap Transistors on Semi Insulating Epitaxy
Optically Controlled Silicon Carbide and Related Wide-Bandgap Transistors and Thyristors
Gate Driver for Enhancement-Mode and Depletion-Mode Wide Bandgap Semiconductor Jfets
Vertical Junction Field Effect Transistors Having Sloped Sidewalls and Methods of Making
Epitaxial Growth on Low Degree Off-Axis Silicon Carbide Substrates and Semiconductor Devices Made Thereby
Self-Aligned Trench Field Effect Transistors with Regrown Gates and Bipolar Junction Transistors with Regrown Base Contact Regions and Methods of Making
Vertical Junction Field Effect Transistor with Mesa Termination and Method of Making the Same
Application:
13/587,151 →
Publication:
US 2012/0309154
Vertical Junction Field Effect Transistors and Bipolar Junction Transistors
Self-Aligned Semiconductor Devices with Reduced Gate-Source Leakage Under Reverse Bias and Methods of Making
Application:
13/613,453 →
Publication:
US 2013/0011979
Optically Controlled Silicon Carbide and Related Wide-Bandgap Transistors and Thyristors
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Silicon Carbide and Related Wide-Bandgap Transistors on Semi-Insulating Epitaxy for High-Speed, High-Power Applications
Application:
60/805,139 →
Vertical Junction Field Effect Transistors Having Sloped Sidewalls and Methods of Making
Application:
61/111,437 →
N-Channel Jfet Based Gate Driver for Enhancement-Mode and Depletion-Mode Wide Bandgap Semiconductor Jfets
Application:
61/177,014 →
Methods of Making Vertical Junction Field-Effect Transistors and Bipolar Junction Transistors Without Ion-Implantation and Devices Made Therewith
Application:
61/218,751 →
Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making
Application:
61/218,758 →
Methods of Making Semiconductor Devices Having Implanted Sidewalls and Devices Made Thereby
Application:
61/267,524 →
Self-Aligned Semiconductor Devices with Reduced Gate-Source Leakage Under Reverse Bias and Methods of Making
Application:
61/347,928 →
Vertical Junction Field Effect Transistors with Improved Thermal Characteristics and Methods of Making
Application:
61/476,534 →
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.