Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby

1. A method comprising:

heating a single-crystal SiC substrate to a first temperature of at least 1400° C. in a chamber;

introducing a carrier gas, a silicon containing gas and carbon containing gas into the chamber; and

epitaxially growing a layer of SiC on a surface of the SiC substrate;

wherein the SiC substrate is heated to the first temperature at a rate of at least 30° C./minute; and

wherein the surface of the SiC substrate is inclined at an angle of from 1° to 3° with respect to a basal plane of the substrate material;

wherein the carrier gas, the silicon containing gas and the carbon containing gas are each introduced into the chamber at a constant flow rate during epitaxial growth and

wherein the constant flow rate of each of the gases is established within 10 minutes of introducing any of the gases into the chamber.

2. The method of claim 1 , wherein the first temperature is 1570 to 1575° C.

3. The method of claim 1 , wherein the carrier gas is H 2 , the silicon containing gas is SiH 4 and wherein the carbon containing gas is C 3 H 8 .

4. The method of claim 3 , wherein the H 2 gas is introduced into the chamber at a flow rate of 50-75 slm, the SiH 4 gas is introduced into the chamber at a flow rate of 30-40 sccm and the C 3 H 8 is introduced into the chamber at a flow rate of 15-20 sccm.

5. The method of claim 1 , wherein HC 1 gas is introduced into the chamber during epitaxial growth.

6. The method of claim 1 , wherein the pressure in the chamber during epitaxial growth is 90 to 110 mbar.

7. The method of claim 1 , wherein the surface of the SiC substrate is inclined at an angle of from 1° to 3° with respect to the (0001) plane of the substrate material.

8. The method of claim 1 , wherein the substrate is a 4H SiC substrate.

9. The method of claim 7 , wherein the surface of the SiC substrate is inclined at an angle of from 1° to 3° towards one of the [1120]directions with respect to the (0001) plane of the substrate material.

10. The method of claim 1 , wherein the silicon containing gas and the carbon containing gas are introduced into the chamber such that the atomic ratio of carbon to silicon in the chamber during epitaxial growth is from 1.4 to 1.6.

11. The method of claim 1 , wherein the total defect count for the substrate and epitaxially grown layer is <40 cm -2 .

12. The method of claim 1 , wherein the average surface roughness of the epitaxially grown layer as measured in an optical profilometer is 15 Angstroms or less.

13. The method of claim 1 , further comprising epitaxially growing one or more additional layers of SiC on the layer of SiC epitaxially grown on the SiC substrate.

14. The method of claim 1 , wherein the constant flow rate varies by no more than 5% during epitaxial growth.

15. The method of claim 1 , wherein the constant flow rate of each of the gases is established within 6 minutes of introducing any of the gases into the chamber.

16. The method of claim 1 , wherein the carrier gas is H 2 .

17. The method of claim 1 , wherein the substrate is heated to the first temperature in 42 minutes or less.

18. The method of claim 1 , wherein the constant flow rate of each of the carrier gas, the silicon containing gas and the carbon containing gas is established within 5 minutes of introducing any of the gases into the chamber.

19. The method of claim 1 , wherein the substrate is heated to the first temperature in 42 minutes or less and wherein the constant flow rate of each of the carrier gas, the silicon containing gas and the carbon containing gas is established within 5 minutes of introducing any of the gases into the chamber.