Patent Assignment
Reel/Frame 026645/0351
Release of Security Interest
Recorded: 2011-07-25
Received: 2011-07-25
Pages: 6
Assignor
BLUECREST VENTURE FINANCE MASTER FUND LIMITED
Executed: 2011-07-18
Assignee
SEMISOUTH LABORATORIES, INC.
ONE RESEARCH BLVD., SUITE 201B, STARKVILLE, MS, 39759, UNITED STATES
Covered Properties
(29)
Vertical Junction Field Effect Transistors Having Sloped Sidewalls and Methods of Making
Application:
12/613,065 →
Methods of Making Vertical Junction Field-Effect Transistors and Bipolar Junction Transistors Without Ion-Implantation and Devices Made Therewith
Application:
61/218,751 →
Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making
Application:
61/218,758 →
N-Channel Jfet Based Gate Driver for Enhancement-Mode and Depletion-Mode Wide Bandgap Semiconductor Jfets
Application:
61/177,014 →
High Temperature Gate Drivers for Wide Bandgap Semiconductor Power Jfets and Integrated Circuits Including the Same
Application:
12/437,173 →
Junction Barrier Schottky Rectifiers Having Epitaxially Grown P+-N Junctions and Methods of Making
Application:
12/146,580 →
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
Application:
12/117,121 →
Methods of Making Lateral Junction Field Effect Transistors Using Selective Epitaxial Growth
Application:
12/102,382 →
Epitaxial Growth on Low Degree Off-Axis Sic Substrates and Semiconductor Devices Made Thereby
Application:
12/055,725 →
Vertical-Channel Junction Field-Effect Transistors Having Buried Gates and Methods of Making
Application:
11/935,442 →
Self-Aligned Trench Field Effect Transistors with Regrown Gates and Bipolar Junction Transistors with Regrown Base Contact Regions and Methods of Making
Application:
11/934,805 →
Vertical Junction Field Effect Transistor with Mesa Termination and Method of Making the Same
Application:
11/836,994 →
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Application:
11/822,568 →
Silicon Carbide and Related Wide-Bandgap Transistors on Semi Insulating Epitaxy
Application:
11/764,593 →
Optically Controlled Silicon Carbide and Related Wide-Bandgap Transistors and Thyristors
Application:
11/764,606 →
Monolithic Vertical Junction Field Effect Transistor and Schottky Barrier Diode Fabricated from Silicon Carbide and Method for Fabricating the Same
Application:
11/808,701 →
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Application:
11/802,388 →
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Application:
11/783,224 →
Self-Aligned Silicon Carbide Semiconductor Devices and Methods of Making the Same
Application:
11/699,509 →
Lateral Trench Field-Effect Transistors in Wide Bandgap Semiconductor Materials, Methods of Making, and Integrated Circuits Incorporating the Transistors
Application:
11/505,813 →
Semiconductor Device with Surge Current Protection and Method of Making the Same
Application:
11/415,279 →
Self-Aligned Trench Field Effect Transistors with Regrown Gates and Bipolar Junction Transistors with Regrown Base Contact Regions and Methods of Making
Application:
11/293,261 →
Vertical-channel junction field-effect transistors having buried gates
Application:
11/198,298 →
Monolithic Vertical Junction Field Effect Transistor and Schottky Barrier Diode Fabricated from Silicon Carbide and Method for Fabricating the Same
Application:
11/176,625 →
Self-Aligned Silicon Carbide Semiconductor Devices and Methods of Making the Same
Application:
11/076,857 →
Lateral Trench Field-Effect Transistors in Wide Bandgap Semiconductor Materials, Methods of Making, and Integrated Circuits Incorporating the Transistors
Application:
10/999,954 →
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Application:
11/000,222 →
Silicon Carbide Bipolar Junction Transistor with Overgrown Base Region
Application:
10/079,893 →
Power Sic Devices Having Raised Guard Rings
Application:
10/079,892 →