Patent Assignment
Reel/Frame 023691/0114
Security Agreement
Recorded: 2009-12-22
Received: 2009-12-22
Pages: 8
Assignor
SEMISOUTH LABORATORIES, INC.
Executed: 2009-11-30
Assignee
BLUECREST VENTURE FINANCE MASTER FUND LIMITED
P.O. BOX 309, UGLAND HOUSE, SOUTH CHURCH STREET, GEORGE TOWN, KYX, CAYMAN ISLANDS
Covered Properties
(29)
Vertical Junction Field Effect Transistors Having Sloped Sidewalls and Methods of Making
Application:
12/613,065 →
Methods of Making Vertical Junction Field-Effect Transistors and Bipolar Junction Transistors Without Ion-Implantation and Devices Made Therewith
Application:
61/218,751 →
Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making
Application:
61/218,758 →
N-Channel Jfet Based Gate Driver for Enhancement-Mode and Depletion-Mode Wide Bandgap Semiconductor Jfets
Application:
61/177,014 →
High Temperature Gate Drivers for Wide Bandgap Semiconductor Power Jfets and Integrated Circuits Including the Same
Application:
12/437,173 →
Junction Barrier Schottky Rectifiers Having Epitaxially Grown P+-N Junctions and Methods of Making
Application:
12/146,580 →
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
Application:
12/117,121 →
Methods of Making Lateral Junction Field Effect Transistors Using Selective Epitaxial Growth
Application:
12/102,382 →
Epitaxial Growth on Low Degree Off-Axis Sic Substrates and Semiconductor Devices Made Thereby
Application:
12/055,725 →
Vertical-Channel Junction Field-Effect Transistors Having Buried Gates and Methods of Making
Application:
11/935,442 →
Self-Aligned Trench Field Effect Transistors with Regrown Gates and Bipolar Junction Transistors with Regrown Base Contact Regions and Methods of Making
Application:
11/934,805 →
Vertical Junction Field Effect Transistor with Mesa Termination and Method of Making the Same
Application:
11/836,994 →
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Application:
11/822,568 →
Silicon Carbide and Related Wide-Bandgap Transistors on Semi Insulating Epitaxy
Application:
11/764,593 →
Optically Controlled Silicon Carbide and Related Wide-Bandgap Transistors and Thyristors
Application:
11/764,606 →
Monolithic Vertical Junction Field Effect Transistor and Schottky Barrier Diode Fabricated from Silicon Carbide and Method for Fabricating the Same
Application:
11/808,701 →
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Application:
11/802,388 →
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Application:
11/783,224 →
Self-Aligned Silicon Carbide Semiconductor Devices and Methods of Making the Same
Application:
11/699,509 →
Lateral Trench Field-Effect Transistors in Wide Bandgap Semiconductor Materials, Methods of Making, and Integrated Circuits Incorporating the Transistors
Application:
11/505,813 →
Semiconductor Device with Surge Current Protection and Method of Making the Same
Application:
11/415,279 →
Self-Aligned Trench Field Effect Transistors with Regrown Gates and Bipolar Junction Transistors with Regrown Base Contact Regions and Methods of Making
Application:
11/293,261 →
Vertical-channel junction field-effect transistors having buried gates
Application:
11/198,298 →
Monolithic Vertical Junction Field Effect Transistor and Schottky Barrier Diode Fabricated from Silicon Carbide and Method for Fabricating the Same
Application:
11/176,625 →
Self-Aligned Silicon Carbide Semiconductor Devices and Methods of Making the Same
Application:
11/076,857 →
Lateral Trench Field-Effect Transistors in Wide Bandgap Semiconductor Materials, Methods of Making, and Integrated Circuits Incorporating the Transistors
Application:
10/999,954 →
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Application:
11/000,222 →
Silicon Carbide Bipolar Junction Transistor with Overgrown Base Region
Application:
10/079,893 →
Power Sic Devices Having Raised Guard Rings
Application:
10/079,892 →