IP Library › Assignment 026959/0973
Patent Assignment
Reel/Frame 026959/0973

Assignment of Assignor's Interest

Recorded: 2011-09-23 Received: 2011-09-23 Pages: 8
Assignor
SEMISOUTH LABORATORIES, INC.
Executed: 2011-08-08
Assignee
SS SC IP, LLC
1401 LIVINGSTON LANE, JACKSON, MS, 39213, UNITED STATES
Covered Properties (32)
Self-Aligned Semiconductor Devices with Reduced Gate-Source Leakage Under Reverse Bias and Methods of Making
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
Application: 13/108,505 →
High Temperature Gate Drivers for Wide Bandgap Semiconductor Power Jfets and Integrated Circuits Including the Same
Application: 13/105,543 →
Vertical Junction Field Effect Transistors with Improved Thermal Characteristics and Methods of Making
Application: 61/476,534 →
Cascode Switches Including Normally-Off and Normally-on Devices and Circuits Comprising the Switches
Application: 13/085,648 →
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Application: 13/021,132 →
Methods of Making Semiconductor Devices Having Implanted Sidewalls and Devices Made Thereby
Vertical Junction Field Effect Transistors Having Sloped Sidewalls and Methods of Making
Application: 12/896,130 →
Silicon Carbide and Related Wide-Bandgap Transistors on Semi Insulating Epitaxy
Application: 12/881,771 →
Normally-Off Integrated Jfet Power Switches in Wide Bandgap Semiconductors and Methods of Making
Application: 12/826,033 →
Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making
Methods of Making Vertical Junction Field Effect Transistors and Bipolar Junction Transistors Without Ion Implantation
Application: 12/818,281 →
Methods of Making Vertical Junction Field Effect Transistors and Bipolar Junction Transistors Without Ion Implantation and Devices Made Therewith
Self-Aligned Semiconductor Devices with Reduced Gate-Source Leakage Under Reverse Bias and Methods of Making
Application: 61/347,928 →
Gate Driver for Enhancement-Mode and Depletion-Mode Wide Bandgap Semiconductor Jfets
High Temperature Gate Drivers for Wide Bandgap Semiconductor Power Jfets and Integrated Circuits Including the Same
Vertical Junction Field Effect Transistors Having Sloped Sidewalls and Methods of Making
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Application: 12/557,199 →
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
High Temperature Gate Drivers for Wide Bandgap Semiconductor Power Jfets and Integrated Circuits Including the Same
Application: 12/437,173 →
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
Application: 12/170,599 →
Junction Barrier Schottky Rectifiers Having Epitaxially Grown P+-N Junctions and Methods of Making
Application: 12/146,580 →
Semiconductor Devices with Non-Punch-Through Semiconductor Channels Having Enhanced Conduction and Methods of Making
Application: 12/117,121 →
Methods of Making Lateral Junction Field Effect Transistors Using Selective Epitaxial Growth
Application: 12/102,382 →
Epitaxial Growth on Low Degree Off-Axis Sic Substrates and Semiconductor Devices Made Thereby
Application: 12/055,725 →
Self-Aligned Trench Field Effect Transistors with Regrown Gates and Bipolar Junction Transistors with Regrown Base Contact Regions and Methods of Making
Application: 11/934,805 →
Vertical Junction Field Effect Transistor with Mesa Termination and Method of Making the Same
Application: 11/836,994 →
Method of Making a Semiconductor Device with Surge Current Protection
Application: 11/819,646 →
Silicon Carbide and Related Wide-Bandgap Transistors on Semi Insulating Epitaxy
Application: 11/764,593 →
Optically Controlled Silicon Carbide and Related Wide-Bandgap Transistors and Thyristors
Application: 11/764,606 →
Half-Bridge Circuits Employing Normally on Switches and Methods of Preventing Unintended Current Flow Therein
Application: 11/802,388 →
Vertical-channel junction field-effect transistors having buried gates
Application: 11/198,298 →