Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device, includes a wafer grinding step of, by means of a revolving grinding stone, forming a thinned portion in a wafer while at the same time forming a slope surrounding said thinned portion, wherein during said formation of said slope, said grinding stone is positioned so that there is always a space between said slope and the facing side of said grinding stone, wherein said thinned portion is thinner than a peripheral portion of said wafer, and wherein said slope extends along and defines an inner circumferential side of said peripheral portion and forms an angle of 75° or more but less than 90° with respect to a main surface of said wafer. The method of manufacturing a semiconductor device further includes a step of forming a semiconductor device in said thinned portion.
1. A method of manufacturing a semiconductor device, comprising:
a wafer grinding step of, using a revolving grinding stone, forming a thinned portion in a wafer and simultaneously forming a slope surrounding said thinned portion, wherein during said formation of said slope, said grinding stone is positioned so that there is always a space between said slope and a side of said grinding stone facing said slope,
wherein said thinned portion is thinner than a peripheral portion of said wafer,
wherein said slope extends along and defines an inner circumferential side of said peripheral portion and forms an angle of 75° or more but less than 90° with respect to a main surface of said wafer, and
wherein a variation of thickness of said thinned portion of said wafer is at or about a constant value for any of said angles of 75° or more but less than 90°; and
a step of forming a semiconductor device on said thinned portion.
2. The method according to claim 1 , wherein said step of forming said semiconductor device includes a photolithography process, an ion implantation process, a thermal diffusion process, a film formation process, or an etching process.
3. The method according to claim 1 , wherein said step of forming said semiconductor device includes forming a first electrode on a top surface of said thinned portion and a second electrode on a bottom surface of said thinned portion.
4. The method according to claim 1 , wherein a number of chippings, a number of stains, and said variation in thickness of said thinned portion of said wafer are dependent on said formed angle.
5. The method according to claim 1 , further comprising:
rotating said stage in a first direction opposite to a second direction of rotation of said revolving grinding stone while forming said thinned portion.
6. The method according to claim 1 , wherein a thickness of said thinned portion of said wafer is between 50μm and 60μm.
7. The method according to claim 1 , wherein said constant value is 2.5μm.